公开(公告)号：US20230377857A1

公开(公告)日：2023-11-23

申请号：US18105918

申请日：2023-02-06

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： SE JIN OH ,  YEONG KWANG LEE ,  JONG HUN PI ,  JUNG MIN KO ,  DOUG YONG SUNG

IPC: H01J37/32 ,  G01J3/02

CPC classification number: H01J37/32972 ,  G01J3/021 ,  G01J3/0208 ,  G01J3/0291

Abstract: A plasma processing apparatus includes; a housing including a first side wall and a second side wall, wherein the housing defines a processing region in which plasma is generated, an optical source unit disposed on the first side wall in alignment with the viewing window, wherein the optical source unit is configured to irradiate the processing region with incident light through the viewing window, a reflector disposed on the second side wall of the housing, wherein the reflector reflects a portion of the incident light irradiating the processing region to generate reflected light, a spectrometer configured to receive the reflected light from the reflector through the viewing window and the optical source unit and a controller configured to determine density of the active species gas within the processing region in relation to the incident light and the reflected light.

公开(公告)号：US20190304754A1

公开(公告)日：2019-10-03

申请号：US16361341

申请日：2019-03-22

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： SEUNG BO SHIM ,  DOUG YONG SUNG ,  YOUNG JIN NOH ,  YONG WOO LEE ,  JI SOO IM ,  HYEONG MO KANG ,  PETER BYUNG H HAN ,  CHEON KYU LEE ,  MASATO HORIGUCHI

IPC: H01J37/32 ,  H01L21/683 ,  H03H7/38 ,  H01L21/67 ,  H03H7/01

Abstract: Plasma processing equipment includes a chuck stage for supporting a wafer and including a lower electrode, an upper electrode disposed on the chuck stage, an AC power supply which applies first to third signals having different magnitudes of frequencies to the upper electrode or the lower electrode, a dielectric ring which surrounds the chuck stage, an edge electrode located within the dielectric ring, and a resonance circuit connected to the edge electrode. The resonance circuit includes a filter circuit which allows only the third signal among the first to third signals to pass, and a series resonance circuit connected in series with the filter circuit and having a first coil and a first variable capacitor connected in series and grounded.

公开(公告)号：US20220005671A1

公开(公告)日：2022-01-06

申请号：US17148037

申请日：2021-01-13

Applicant: Samsung Electronics Co., Ltd.

Inventor： SEUNG BO SHIM ,  DOUG YONG SUNG ,  HO-JUN LEE ,  JEE HUN JEONG ,  SUNG HWAN CHO ,  JU-HONG CHA

IPC: H01J37/32

Abstract: An inductively coupled plasma processing apparatus includes a lower chamber providing a space for a substrate, a high-frequency antenna configured to generate inductively coupled plasma in the lower chamber, dielectric windows disposed between the lower chamber and the high-frequency antenna, metal windows alternatingly disposed between the dielectric windows, and gas inlet pipes disposed in each of the metal windows, wherein each of the gas inlet pipes includes nozzles configured to introduce gases to the lower chamber.

公开(公告)号：US20230044703A1

公开(公告)日：2023-02-09

申请号：US17972798

申请日：2022-10-25

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： SEUNG BO SHIM ,  DOUG YONG SUNG ,  YOUNG JIN NOH ,  YONG WOO LEE ,  JI SOO IM ,  HYEONG MO KANG ,  PETER BYUNG H HAN ,  CHEON KYU LEE ,  MASATO HORIGUCHI

IPC: H01J37/32 ,  H01L21/683 ,  H03H7/38 ,  H03H7/01 ,  H01L21/67

Abstract: Plasma processing equipment includes a chuck stage for supporting a wafer and including a lower electrode, an upper electrode disposed on the chuck stage, an AC power supply which applies first to third signals having different magnitudes of frequencies to the upper electrode or the lower electrode, a dielectric ring which surrounds the chuck stage, an edge electrode located within the dielectric ring, and a resonance circuit connected to the edge electrode. The resonance circuit includes a filter circuit which allows only the third signal among the first to third signals to pass, and a series resonance circuit connected in series with the filter circuit and having a first coil and a first variable capacitor connected in series and grounded.

公开(公告)号：US20190323893A1

公开(公告)日：2019-10-24

申请号：US16157682

申请日：2018-10-11

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： SE JIN OH ,  TAE KYUN KANG ,  YU SIN KIM ,  JAE IK KIM ,  CHAN BIN MO ,  DOUG YONG SUNG ,  SEUNG BIN AHN ,  KUL INN ,  YUN KWANG JEON

IPC: G01J5/00 ,  H01L21/67 ,  G01B11/06 ,  H01J37/32

Abstract: A semiconductor substrate measuring apparatus includes a light source unit generating irradiation light including light in a first wavelength band and light in a second wavelength band. An optical unit irradiates the irradiation light on a measurement object and condenses reflected light. A light splitting unit splits the reflected light, condensed in the optical unit, into a first optical path and a second optical path. A first detecting unit is disposed on the first optical path and detects first interference light in the first wavelength band in the reflected light. A second detecting unit is disposed on the second optical path and detects second interference light in the second wavelength band in the reflected light. A controlling unit calculates at least one of a surface shape or a thickness of the measurement object. The controlling unit calculates a temperature of the measurement object.