公开(公告)号：US20160141392A1

公开(公告)日：2016-05-19

申请号：US15003288

申请日：2016-01-21

Applicant: Samsung Electronics Co., Ltd.

Inventor： SUNGMIN KIM ,  SUNG-DAE SUK ,  JAEHOO PARK ,  DONGHO CHA ,  DAEWON HA

IPC: H01L29/66 ,  H01L21/308 ,  H01L21/762 ,  H01L29/06

CPC classification number: H01L29/66795 ,  H01L21/02233 ,  H01L21/308 ,  H01L21/76224 ,  H01L21/845 ,  H01L29/0649 ,  H01L29/66545 ,  H01L29/6656

Abstract: A method of manufacturing a semiconductor device includes patterning a substrate to form an active fin, forming a sacrificial gate pattern crossing over the active fin on the substrate, forming an interlayer insulating layer on the sacrificial gate pattern, removing the sacrificial gate pattern to form a gap region exposing the active fin in the interlayer insulating layer, and oxidizing a portion of the active fin exposed by the gap region to form an insulation pattern between the active fin and the substrate.

Abstract translation: 制造半导体器件的方法包括：图案化衬底以形成有源鳍片，形成与衬底上的有源鳍片交叉的牺牲栅极图案，在牺牲栅极图案上形成层间绝缘层，去除牺牲栅极图案以形成 间隙区域使层间绝缘层中的活性鳍片曝光，并且氧化由间隙区域暴露的活性鳍片的一部分，以在活性鳍片和衬底之间形成绝缘图案。