公开(公告)号：US12272705B2

公开(公告)日：2025-04-08

申请号：US17239291

申请日：2021-04-23

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Kook Tae Kim ,  Chang Kyu Lee ,  Dongmo Im ,  Ju-eun Kim ,  Miseon Park ,  Jungim Choe ,  Soojin Hong

IPC: H01L31/062 ,  H10F39/00

Abstract: An image sensor is provided and may include a semiconductor substrate having a surface and including trench, the trench extending from the surface into the semiconductor substrate, an insulating pattern provided in the trench; and a doped region in the semiconductor substrate and on the insulating patterns. The doped region includes a side portion on a side surface of the insulating pattern, and a bottom portion on a bottom surface of the insulating pattern. A thickness of the side portion of the doped region is from 85% to 115% of a thickness of the bottom portion of the doped region, and a number of dopants per unit area in the side portion of the doped region is from 85% to 115% of a number of dopants per unit area in the bottom portion.

公开(公告)号：US20250006770A1

公开(公告)日：2025-01-02

申请号：US18735325

申请日：2024-06-06

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jihun Lim ,  Jinyoung Kim ,  Myunghae Seo ,  Sungki Min ,  Chang Kyu Lee

IPC: H01L27/146

Abstract: A dual vertical transfer gate, a transistor including the same, and a CMOS image sensing device including the same. In some embodiments, a gate of the dual vertical transfer transistor may include a pair of poles, which are extended to an n-type region of a photodiode, and a connecting portion, which connects the paired poles to each other. A first insulating pattern may be provided between the poles and on the substrate.

公开(公告)号：US20230064084A1

公开(公告)日：2023-03-02

申请号：US17866805

申请日：2022-07-18

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： MINHWAN JEON ,  Chanho Park ,  Kyung Rae Byun ,  Chang Kyu Lee ,  Chongkwang Chang

IPC: H01L27/146

Abstract: An image sensor including: a semiconductor substrate including a plurality of pixel regions; an anti-reflection layer on the semiconductor substrate; color filters provided on the anti-reflection layer and in the pixel regions; and a fence structure disposed between adjacent ones of the color filters, wherein the fence structure includes: a lower portion penetrating the anti-reflection layer; an upper portion on the anti-reflection layer; and an intermediate portion between the lower portion and the upper portion, wherein the fence structure has undercut regions, which are provided at both sides of the intermediate portion and are between the upper portion of the fence structure and a top surface of the anti-reflection layer.