公开(公告)号：US20250081599A1

公开(公告)日：2025-03-06

申请号：US18616279

申请日：2024-03-26

Applicant: Samsung Electronics Co., Ltd.

Inventor： Dong Hoon HWANG ,  Hyo Jin KIM ,  Byung Ho MOON ,  Kyoung-MI PARK ,  Kyung Hee CHO

IPC: H01L27/088 ,  H01L21/8234 ,  H01L29/06 ,  H01L29/08 ,  H01L29/423 ,  H01L29/66 ,  H01L29/775

Abstract: A semiconductor device that includes a lower pattern extending in a first direction, a first channel pattern on the lower pattern, and includes a plurality of first sheet patterns, a second channel pattern on the lower pattern, includes a plurality of second sheet patterns and spaced apart from the first channel pattern, a first gate structure which extends around the first sheet pattern, and includes a first gate electrode and a first gate insulating film, a second gate structure which extends around the second sheet pattern, and includes a second gate electrode and a second gate insulating film, a first gate capping pattern and a second gate capping pattern. The number of first sheet patterns is different from the number of second sheet patterns, and a thickness of the first gate capping pattern is different from a thickness of the second gate capping pattern.