公开(公告)号：US20240120287A1

公开(公告)日：2024-04-11

申请号：US18480148

申请日：2023-10-03

Applicant: Samsung Electronics Co., Ltd.

Inventor： Sang Won PARK ,  A Yeong CHA ,  Byeong-Hwan SON ,  Hye Jin LEE ,  Jung Hyun CHOI ,  Jong Hee HAN

IPC: H01L23/544 ,  G03F7/00

CPC classification number: H01L23/544 ,  G03F7/70633 ,  H01L2223/54426

Abstract: Provided is an overlay mark. The overlay mark comprises a substrate, a lower overlay in the substrate, a pattern layer on the substrate, and an upper overlay defining an opening on the pattern layer. The lower overlay does not overlap the upper overlay in a thickness direction of the substrate.

公开(公告)号：US20240241451A1

公开(公告)日：2024-07-18

申请号：US18528998

申请日：2023-12-05

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Daehee LEE ,  Sangwon PARK ,  Kyeonga KIM ,  Jieun PARK ,  Byeong-Hwan SON

IPC: G03F7/00 ,  G03F1/42 ,  G03F1/44 ,  H01L21/266

CPC classification number: G03F7/70633 ,  G03F1/42 ,  G03F1/44 ,  G03F7/70683 ,  H01L21/266

Abstract: A method of measuring overlay, including forming an active region on a cell region of a substrate and forming at least one overlay key structure on a scribe lane region of the substrate, forming a first mask pattern on the active region and forming a first sub-pattern on the overlay key structure, checking an alignment using the first sub-pattern, performing a first ion implantation process into the substrate, forming a second mask pattern on the active region and forming a second sub-pattern on the overlay key structure, checking the alignment using the second sub-pattern, and performing a second ion implantation process into the substrate, wherein a second width of the second sub-pattern is greater than a first width of the first sub-pattern.