公开(公告)号：US20180204874A1

公开(公告)日：2018-07-19

申请号：US15696132

申请日：2017-09-05

Applicant: Samsung Electronics Co., Ltd.

Inventor： Kwang-Min LEE ,  GwideokRyan LEE ,  SEOKJIN KWON ,  BEOMSUK LEE ,  TAEYON LEE ,  DONGMO IM

IPC: H01L27/146

CPC classification number: H01L27/14645 ,  H01L27/14605 ,  H01L27/1461 ,  H01L27/14621 ,  H01L27/14623 ,  H01L27/14636 ,  H04N9/045 ,  H04N9/07 ,  H04N2209/042

Abstract: An image sensor having active, peripheral and dummy regions is provided as follows. A dummy through electrode is disposed in the substrate. An active through electrode is disposed in the substrate. An insulation structure in which a color filter is embedded is disposed on the substrate. A dummy bottom electrode is disposed on the insulation structure and connected electrically to the dummy through electrode. An active bottom electrode is disposed on the insulation structure and connected electrically to the active through electrode. A photoelectric conversion layer is disposed on the insulation structure. A top electrode is disposed on the photoelectric conversion layer and the dummy bottom electrode. The top electrode is connected electrically to the dummy bottom electrode. The photoelectric conversion layer is interposed between the top electrode and the active bottom electrode which are separated from each other.

公开(公告)号：US20200381473A1

公开(公告)日：2020-12-03

申请号：US16711301

申请日：2019-12-11

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： CHANGHWA KIM ,  KWANSIK KIM ,  DONGCHAN KIM ,  SANG-SU PARK ,  BEOMSUK LEE ,  TAEYON LEE ,  HAJIN LIM

IPC: H01L27/146 ,  H01L51/44

Abstract: An image sensor and a method of fabricating the image sensor, the image sensor including a semiconductor substrate having a first floating diffusion region, a molding pattern over the first floating diffusion region and including an opening, a first photoelectric conversion part at a surface of the semiconductor substrate, and a first transfer transistor connecting the first photoelectric conversion part to the first floating diffusion region. The first transfer transistor includes a channel pattern in the opening and a first transfer gate electrode. The channel pattern includes an oxide semiconductor. The channel pattern also includes a sidewall portion that covers a side surface of the opening, and a center portion that extends from the sidewall portion to a region over the first transfer gate electrode.

公开(公告)号：US20230017757A1

公开(公告)日：2023-01-19

申请号：US17947702

申请日：2022-09-19

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： SANGSU PARK ,  KWANSIK KIM ,  SANGCHUN PARK ,  BEOMSUK LEE ,  TAEYON LEE

IPC: H01L27/146 ,  H04N9/04 ,  H04N5/357 ,  H01L51/42

Abstract: An image sensor includes pixel regions separated by an isolation region and receiving incident light, color filters respectively disposed on a surface of the semiconductor substrate corresponding to the pixel regions, a cover insulating layer disposed on the surface of the semiconductor substrate and covering the color filters, first transparent electrodes disposed on the cover insulating layer and spaced apart to respectively overlap the color filters, an isolation pattern disposed on the cover insulating layer between the first transparent electrodes and having a trench spaced apart from the first transparent electrodes, a drain electrode disposed in the trench of the isolation pattern, and an organic photoelectric layer and a second transparent electrode sequentially disposed on the first transparent electrodes and the isolation pattern.

公开(公告)号：US20210136330A1

公开(公告)日：2021-05-06

申请号：US16878303

申请日：2020-05-19

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： SANGSU PARK ,  KWANSIK KIM ,  SANGCHUN PARK ,  BEOMSUK LEE ,  TAEYON LEE

IPC: H04N9/04 ,  H04N5/357

Abstract: An image sensor includes pixel regions separated by an isolation region and receiving incident light, color filters respectively disposed on a surface of the semiconductor substrate corresponding to the pixel regions, a cover insulating layer disposed on the surface of the semiconductor substrate and covering the color filters, first transparent electrodes disposed on the cover insulating layer and spaced apart to respectively overlap the color filters, an isolation pattern disposed on the cover insulating layer between the first transparent electrodes and having a trench spaced apart from the first transparent electrodes, a drain electrode disposed in the trench of the isolation pattern, and an organic photoelectric layer and a second transparent electrode sequentially disposed on the first transparent electrodes and the isolation pattern.

公开(公告)号：US20200219914A1

公开(公告)日：2020-07-09

申请号：US16589488

申请日：2019-10-01

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： CHANGHWA KIM ,  KWANSIK KIM ,  YOONKYOUNG KIM ,  SANG-SU PARK ,  BEOMSUK LEE ,  TAEYON LEE ,  MIN-JUN CHOI

IPC: H01L27/146 ,  H01L27/148

Abstract: An image sensor and a method of fabricating the same, the image sensor including a semiconductor substrate having a first surface and a second surface facing each other; a first photoelectric conversion part disposed on the second surface of the semiconductor substrate; a first floating diffusion region provided in the semiconductor substrate adjacent to the first surface; a first interlayered insulating layer covering the first surface; a first channel pattern on the first interlayered insulating layer; and a first transfer gate electrode disposed adjacent to the first channel pattern and that controls transfer of charge generated in the first photoelectric conversion part to the first floating diffusion region through the first channel pattern.