公开(公告)号：US08956933B2

公开(公告)日：2015-02-17

申请号：US13656976

申请日：2012-10-22

Applicant: Samsung Display Co., Ltd.

Inventor： Wan-Soon Im ,  Young-Goo Song ,  Hwa-Dong Jung

IPC: H01L21/00

CPC classification number: H01L21/02675 ,  H01L21/02532 ,  H01L27/124 ,  H01L29/42384 ,  H01L29/66765

Abstract: In a method of forming an active pattern, a gate metal layer is formed on a base substrate. The gate metal layer is patterned to form a gate line, and a gate pattern spaced apart from the gate line. A gate insulation layer is formed on the base substrate including the gate line and the gate pattern thereon, to form a first protruded boundary surface corresponding to an area including the gate pattern. An amorphous semiconductor layer is formed on the base substrate including the gate insulation layer thereon, to form a second protruded boundary surface corresponding to the first protruded boundary surface. The amorphous semiconductor layer is crystallized by illuminating a laser to the amorphous semiconductor layer on the second protruded boundary surface.

Abstract translation: 在形成有源图案的方法中，在基底基板上形成栅极金属层。 图案化栅极金属层以形成栅极线，以及与栅极线间隔开的栅极图案。 在包括栅极线和其上的栅极图案的基底基板上形成栅极绝缘层，以形成对应于包括栅极图案的区域的第一突出边界面。 在其上包括栅极绝缘层的基底基板上形成非晶半导体层，以形成对应于第一突出边界面的第二突出边界面。 通过向第二突出界面上的非晶半导体层照射激光而使非晶半导体层结晶化。