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公开(公告)号:US11342525B2
公开(公告)日:2022-05-24
申请号:US16583136
申请日:2019-09-25
Applicant: Samsung Display Co., Ltd.
Inventor: Yo Han Kim , Yoon Hyeung Cho , Yong Tack Kim , Jong Jin Park , Seung In Baek , Yun Ah Chung , Young Cheol Joo
Abstract: A display device is provided. The display device includes a plurality of pixels; a first base; an organic light emitting element on the first base and in each of the pixels; a second base facing the first base; and a filling pattern layer between the organic light emitting elements and the second base, the filling pattern layer including a first pattern portion and a second pattern portion alternately arranged along a same direction in a plan view, wherein the first pattern portion is in each of the pixels, the second pattern portion is at a boundary of each of the pixels and contacts the first pattern portion, and a refractive index of the second pattern portion is smaller than that of the first pattern portion.
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公开(公告)号:US11489021B2
公开(公告)日:2022-11-01
申请号:US16774359
申请日:2020-01-28
Applicant: Samsung Display Co., Ltd.
Inventor: Yoon Hyeung Cho , Yo Han Kim , Byoung Duk Lee , Yong Tack Kim , Jong Jin Park , Yun Ah Chung , Young Cheol Joo
Abstract: A color conversion substrate includes a base including a first light transmitting region and a light shielding region around the first light transmitting region; a first color filter on the base in the first light transmitting region; a first wavelength conversion pattern in a first microcavity on the first color filter including a first wavelength shifter; and a light shielding member on the base and in the light shielding region. The first microcavity includes an open side, and the light shielding member directly contacts the first wavelength conversion pattern at the open side of the first microcavity.
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公开(公告)号:US11362309B2
公开(公告)日:2022-06-14
申请号:US16773591
申请日:2020-01-27
Applicant: Samsung Display Co., Ltd.
Inventor: Yun Ah Chung , Yo Han Kim , Jong Woo Kim , Jong Jin Park , Byoung Duk Lee , Yoon Hyeung Cho , Young Cheol Joo , Jae Heung Ha
Abstract: A display device comprises a first substrate comprising at least one light-emitting element; a second substrate facing the first substrate, wherein light emitted from the light-emitting element is to be incident on the second substrate; and a filling layer between the first substrate and the second substrate, wherein the filling layer comprises a filling pattern comprising a first pattern part on the first substrate and having a curve portion formed in at least a part thereof.
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公开(公告)号:US11430968B2
公开(公告)日:2022-08-30
申请号:US16999726
申请日:2020-08-21
Applicant: Samsung Display Co., Ltd.
Inventor: Yohan Kim , Jongjin Park , Won Min Yun , Seungju Lee , Sumin Jung , Young Cheol Joo , Yoon Hyeung Cho
IPC: H01L27/32 , H01L51/50 , H01L51/52 , G02F1/13 , G02F1/1362 , G02F1/1335 , G02F1/1339
Abstract: A display device, including: a display panel including a light emitting element and an encapsulation layer covering the light emitting element; a color conversion panel overlapping the display panel, the color conversion panel including a color conversion element; a column spacer between the display panel and the color conversion panel; a filling layer filling a space between the display panel and the color conversion panel and surrounding the column spacer; and a buffer layer between the column spacer and the encapsulation layer of the display panel, the buffer layer including silicon oxycarbide (SiOxCy).
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公开(公告)号:US20180061865A1
公开(公告)日:2018-03-01
申请号:US15678503
申请日:2017-08-16
Inventor: Jae Heung Ha , Jong Woo Kim , Ji Young Moon , Min Ho Oh , Seung Jae Lee , Yoon Hyeung Cho , Young Cheol Joo , Hyeong Joon Kim , Eun-Kil Park , Sang Jin Han
IPC: H01L27/12 , H01L29/49 , H01L29/786
CPC classification number: H01L27/1225 , H01L29/4908 , H01L29/7869
Abstract: A thin film transistor array panel includes a substrate, a gate insulating layer, an interface layer, and a semiconductor layer. The gate insulating layer is disposed on the substrate. The interface layer is disposed on the gate insulating layer. The semiconductor layer is disposed on the interface layer. The interface layer includes a fluorinated silicon oxide. The semiconductor layer includes a p-type oxide semiconductor material.
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