METHOD FOR INSPECTING POLYSILICON LAYER
    3.
    发明申请
    METHOD FOR INSPECTING POLYSILICON LAYER 有权
    检测多晶硅层的方法

    公开(公告)号:US20140353523A1

    公开(公告)日:2014-12-04

    申请号:US14094051

    申请日:2013-12-02

    CPC classification number: G01N21/6489 G01N21/9501

    Abstract: A method for inspecting a polysilicon layer includes: radiating excitation light to the polysilicon layer; and detecting a photoluminescence signal generated by the excitation light, wherein average power of the excitation light has a range of 1 W/cm2 to 10 W/cm2, and peak power of the excitation light has a range of 100 W/cm2 to 1000 W/cm2.

    Abstract translation: 一种用于检查多晶硅层的方法包括:向多晶硅层辐射激发光; 并且检测由激发光产生的光致发光信号,其中激发光的平均功率具有1W / cm 2至10W / cm 2的范围,并且激发光的峰值功率具有100W / cm 2至1000W的范围 / cm2。

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