公开(公告)号：US20160322507A1

公开(公告)日：2016-11-03

申请号：US15137476

申请日：2016-04-25

Applicant: SAMSUNG DISPLAY CO., LTD.

Inventor： June Whan CHOI ,  Jun Hyuck JEON ,  Seung-Kyeng CHO ,  Jang Soo KIM ,  Jae Woo PARK ,  Ki Seong SEO ,  Soo Woong LEE ,  Jeong Young LEE

IPC: H01L29/786 ,  H01L27/12 ,  H01L29/24

CPC classification number: H01L29/78606 ,  H01L21/28008 ,  H01L27/1225 ,  H01L27/1259 ,  H01L27/1262 ,  H01L29/24 ,  H01L29/45 ,  H01L29/458 ,  H01L29/78669 ,  H01L29/78678 ,  H01L29/7869 ,  H01L29/78696

Abstract: A thin film transistor array panel, including a substrate; a gate electrode on the substrate; a semiconductor layer on the substrate; a gate insulating layer between the gate electrode and the semiconductor layer, the gate insulating layer including a first oxide insulating layer in contact with the semiconductor layer; a source electrode on the semiconductor layer; a drain electrode facing the source electrode; and a passivation layer covering the source electrode and the drain electrode, the passivation layer including a second oxide insulating layer in contact with the source electrode and the drain electrode, at least one of the first oxide insulating layer and the second oxide insulating layer having a varying hydrogen content distribution in a thickness direction.

Abstract translation: 一种薄膜晶体管阵列面板，包括基板; 基板上的栅电极; 衬底上的半导体层; 在所述栅极电极和所述半导体层之间的栅极绝缘层，所述栅极绝缘层包括与所述半导体层接触的第一氧化物绝缘层; 半导体层上的源电极; 面向源电极的漏电极; 以及覆盖所述源电极和所述漏电极的钝化层，所述钝化层包括与所述源电极和所述漏电极接触的第二氧化物绝缘层，所述第一氧化物绝缘层和所述第二氧化物绝缘层中的至少一个具有 在厚度方向上变化的氢含量分布。

公开(公告)号：US20150053135A1

公开(公告)日：2015-02-26

申请号：US14187471

申请日：2014-02-24

Applicant: Samsung Display Co., Ltd.

Inventor： Yung-Bin CHUNG ,  Jun-Hyuck JEON ,  Yeon-Taek JUNG ,  Seok-Bae KO ,  Myoung-Jae KIM ,  Jin-Hyuck SONG ,  Eun-A YU ,  Seung-Kyeng CHO ,  Ji-Hyun HAM

IPC: H01J37/32 ,  C23C16/509

CPC classification number: H01J37/32577 ,  H01J37/32091 ,  Y10T428/24628

Abstract: A strap for a plasma processing apparatus includes a main body, and a protrusion pattern defined in the main body. The main body may include a binding part defined at opposing ends thereof. The protrusion pattern may include a protrusion.

Abstract translation: 用于等离子体处理装置的带包括主体和限定在主体中的突起图案。 主体可以包括限定在其相对端的绑定部。 突起图案可以包括突起。