公开(公告)号：US20160342010A1

公开(公告)日：2016-11-24

申请号：US15158884

申请日：2016-05-19

Applicant: Samsung Display Co., Ltd.

Inventor： Seung KIM ,  Seung-Ho KIM ,  Cheol-Min PARK ,  Sang-Hoon AHN ,  Eun-Kyung YEON ,  Hoi-Kwan LEE ,  In-Sun HWANG

IPC: G02F1/1333 ,  G02F1/1368

CPC classification number: G02F1/133305

Abstract: A curved transparent substrate includes an alkali-free base layer having a curved shape and a compression applying layer compression applying layer which is disposed on a surface of the alkali-free base layer and applies a compression to the alkali-free base layer where an alkali ion content of the compression applying layer is greater than an alkali ion content of the alkali-free base layer.

Abstract translation: 弯曲的透明基板包括具有弯曲形状的无碱基层和压缩施加层压缩施加层，该压缩施加层设置在无碱基层的表面上并对无碱基层施加压缩，其中碱 压缩施加层的离子含量大于无碱性基底层的碱离子含量。

公开(公告)号：US20150348782A1

公开(公告)日：2015-12-03

申请号：US14600113

申请日：2015-01-20

Applicant: SAMSUNG DISPLAY CO., LTD.

Inventor： Byoung-Kwon CHOO ,  Sang-Hoon AHN ,  Byoung-Ho CHEONG ,  Joo-Woan CHO ,  Hyun-Jin CHO ,  Soo-Yeon HAN

IPC: H01L21/02 ,  H01L21/67

CPC classification number: H01L21/02683 ,  H01L21/02532 ,  H01L21/02686 ,  H01L21/02691 ,  H01L27/14698

Abstract: An apparatus for crystallizing an active layer of a thin film transistor, the apparatus includes a first laser irradiating a first beam toward a substrate, an amorphous layer on the substrate being crystallizable into the active layer of the thin film transistor by the first beam, and a second laser irradiating a second beam toward the substrate to heat the active layer, the second beam having an asymmetric intensity profile in a scanning direction of the first and second beams.

Abstract translation: 一种用于使薄膜晶体管的有源层结晶的装置，该装置包括：向基板照射第一光束的第一激光器，基板上的非晶层通过第一光束可结晶到薄膜晶体管的有源层中;以及 将第二光束照射到所述基板以加热所述有源层的第二激光器，所述第二光束在所述第一和第二光束的扫描方向上具有不对称的强度分布。