公开(公告)号：US20160117041A1

公开(公告)日：2016-04-28

申请号：US14795370

申请日：2015-07-09

Applicant: Samsung Display Co., Ltd.

Inventor： Dong Eup LEE ,  Minhyeng LEE

IPC: G06F3/041 ,  G09G3/32 ,  G06F3/01

CPC classification number: G06F3/0416

Abstract: A display apparatus comprises: a display panel configured to display an image; a touch panel disposed on the display panel; and a circuit board electrically connected to each of the display panel and the touch panel, the circuit board including a first surface and a second surface opposite the first surface. The circuit board includes: a first circuit portion including a first connection disposed in the first surface and electrically connected to the display panel; a second circuit portion including a second connection disposed in the second surface and electrically connected to the touch panel; and a bending portion configured to link the first circuit portion to the second circuit portion, and curving in a direction toward the first circuit portion.

Abstract translation: 一种显示装置，包括：显示面板，被配置为显示图像; 设置在所述显示面板上的触摸面板; 以及电连接到所述显示面板和所述触摸面板的每个的电路板，所述电路板包括与所述第一表面相对的第一表面和第二表面。 电路板包括：第一电路部分，包括设置在第一表面中并电连接到显示面板的第一连接; 第二电路部分，包括设置在第二表面中并电连接到触摸面板的第二连接; 以及弯曲部，其构造成将所述第一电路部分连接到所述第二电路部分，并且朝向所述第一电路部分的方向弯曲。

公开(公告)号：US20160079286A1

公开(公告)日：2016-03-17

申请号：US14819611

申请日：2015-08-06

Applicant: SAMSUNG DISPLAY CO., LTD.

Inventor： Guanghai JIN ,  Yongjoo KIM ,  Minhyeng LEE

IPC: H01L27/12 ,  H01L29/66 ,  H01L21/283 ,  H01L29/423 ,  H01L21/28 ,  H01L29/786 ,  H01L29/417

CPC classification number: H01L27/1255 ,  H01L21/28026 ,  H01L21/283 ,  H01L27/1222 ,  H01L27/124 ,  H01L27/127 ,  H01L27/1288 ,  H01L29/41733 ,  H01L29/42384 ,  H01L29/4908 ,  H01L29/66545 ,  H01L29/66742 ,  H01L29/78696 ,  H01L2227/323

Abstract: A thin-film transistor (TFT) array substrate including at least one TFT, the at least one TFT including a semiconductor layer including a source region and a drain region having a first doping concentration on a substrate, a channel region between the source and drain regions and having a second doping concentration, the second doping concentration being lower than the first doping concentration, and a non-doping region extending from the source and drain regions; a gate insulating layer on the semiconductor layer; a gate electrode on the gate insulating layer and at least partially overlapping the channel region; and a source electrode and a drain electrode insulated from the gate electrode and electrically connected to the source region and the drain region, respectively.

Abstract translation: 1.一种薄膜晶体管（TFT）阵列基板，包括至少一个TFT，所述至少一个TFT包括半导体层，所述半导体层包括源极区和在衬底上具有第一掺杂浓度的漏极区，所述源极和漏极之间的沟道区 并且具有第二掺杂浓度，所述第二掺杂浓度低于所述第一掺杂浓度，以及从所述源极和漏极区延伸的非掺杂区; 半导体层上的栅极绝缘层; 所述栅电极在所述栅极绝缘层上并且至少部分地与所述沟道区重叠; 以及源极电极和漏极电极，与栅电极绝缘并分别电连接到源极区域和漏极区域。