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公开(公告)号:US08841666B2
公开(公告)日:2014-09-23
申请号:US14055607
申请日:2013-10-16
Applicant: Samsung Display Co., Ltd
Inventor: Jeong-Hwan Kim , Kyung-Hye Kim , Joo-Sun Yoon
CPC classification number: H01L27/3244 , H01L27/1225 , H01L27/3258 , H01L27/3272 , H01L29/7869
Abstract: In an aspect, a display device including: a substrate; a thin film transistor formed on the substrate, and comprising an active layer formed of an oxide semiconductor; a passivation layer formed on the thin film transistor; and a hydrogen blocking layer positioned between the active layer and the passivation layer is provided.
Abstract translation: 一方面,一种显示装置,包括:基板; 形成在所述衬底上的薄膜晶体管,并且包括由氧化物半导体形成的有源层; 形成在所述薄膜晶体管上的钝化层; 并且设置位于有源层和钝化层之间的氢阻挡层。
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公开(公告)号:US20140139772A1
公开(公告)日:2014-05-22
申请号:US14055607
申请日:2013-10-16
Applicant: Samsung Display Co., Ltd.
Inventor: Jeong-Hwan Kim , Kyung-Hye Kim , Joo-Sun Yoon
IPC: H01L27/32
CPC classification number: H01L27/3244 , H01L27/1225 , H01L27/3258 , H01L27/3272 , H01L29/7869
Abstract: In an aspect, a display device including: a substrate; a thin film transistor formed on the substrate, and comprising an active layer formed of an oxide semiconductor; a passivation layer formed on the thin film transistor; and a hydrogen blocking layer positioned between the active layer and the passivation layer is provided.
Abstract translation: 一方面,一种显示装置,包括:基板; 形成在所述衬底上的薄膜晶体管,并且包括由氧化物半导体形成的有源层; 形成在所述薄膜晶体管上的钝化层; 并且设置位于有源层和钝化层之间的氢阻挡层。
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