THIN FILM SEMICONDUCTOR DEVICE COMPRISING A POLYCRYSTALLINE SEMICONDUCTOR LAYER FORMED ON AN INSULATION LAYER HAVING DIFFERENT THICKNESS
    1.
    发明申请
    THIN FILM SEMICONDUCTOR DEVICE COMPRISING A POLYCRYSTALLINE SEMICONDUCTOR LAYER FORMED ON AN INSULATION LAYER HAVING DIFFERENT THICKNESS 审中-公开
    包含在具有不同厚度的绝缘层上形成的多晶半导体层的薄膜半导体器件

    公开(公告)号:US20140051218A1

    公开(公告)日:2014-02-20

    申请号:US14067454

    申请日:2013-10-30

    Abstract: In an organic light emitting diode (OLED) display and a manufacturing method thereof, the OLED display includes a substrate main body; an insulation layer pattern formed on the substrate main body, and including a first thickness layer and a second thickness layer thinner than the first thickness layer; a metal catalyst that is scattered on the first thickness layer of the insulation layer pattern; and a polycrystalline semiconductor layer formed on the insulation layer pattern, and divided into a first crystal area corresponding to the first thickness layer and to a portion of the second thickness layer adjacent to the first thickness layer and a second crystal area corresponding to the remaining part of the second thickness layer. The first crystal area of the polycrystalline semiconductor layer is crystallized through the metal catalyst, and the second crystal area of the polycrystalline semiconductor layer is solid phase crystallized.

    Abstract translation: 在有机发光二极管(OLED)显示器及其制造方法中,OLED显示器包括:基板主体; 绝缘层图案,形成在所述基板主体上,并且包括第一厚度层和比所述第一厚度层更薄的第二厚度层; 分散在绝缘层图案的第一厚度层上的金属催化剂; 以及形成在所述绝缘层图案上的多晶半导体层,并且被分成与所述第一厚度层相对应的第一晶体区域和与所述第一厚度层相邻的所述第二厚度层的一部分,以及与所述第一厚度层的剩余部分相对应的第二晶体区域 的第二厚度层。 多晶半导体层的第一晶体区域通过金属催化剂结晶,多晶半导体层的第二晶体区域是固相结晶化的。

    METHOD OF MANUFACTURING ORGANIC LIGHT EMITTING DIODE DISPLAY
    2.
    发明申请
    METHOD OF MANUFACTURING ORGANIC LIGHT EMITTING DIODE DISPLAY 审中-公开
    制造有机发光二极管显示器的方法

    公开(公告)号:US20140179044A1

    公开(公告)日:2014-06-26

    申请号:US14193227

    申请日:2014-02-28

    Abstract: An OLED display includes a first polysilicon layer pattern on a substrate having a first gate electrode, a second gate electrode, and a first capacitor electrode, a gate insulating layer pattern, a second polysilicon layer pattern including a first active layer, a second active layer, and a capacitor polycrystalline dummy layer, a third amorphous silicon layer pattern including first source and drain resistant contact layers on a predetermined region of the first active layer, second source and drain resistant contact layers on a predetermined region of the second active layer, and a capacitor amorphous dummy layer on the capacitor polycrystalline dummy layer, and a data metal layer pattern including first source/drain electrodes, second source/drain electrodes, and a second capacitor electrode.

    Abstract translation: OLED显示器包括在具有第一栅电极,第二栅极和第一电容器电极的基板上的第一多晶硅层图案,栅极绝缘层图案,包括第一有源层的第二多晶硅层图案,第二有源层 以及电容器多晶虚拟层,在第一有源层的预定区域上包括第一源极和漏极接触层的第三非晶硅层图案,在第二有源层的预定区域上的第二源极和漏极接触层,以及 电容器多晶虚拟层上的电容器非晶虚拟层,以及包括第一源极/漏极,第二源极/漏极和第二电容器电极的数据金属层图案。

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