THIN FILM SEMICONDUCTOR DEVICE COMPRISING A POLYCRYSTALLINE SEMICONDUCTOR LAYER FORMED ON AN INSULATION LAYER HAVING DIFFERENT THICKNESS
    1.
    发明申请
    THIN FILM SEMICONDUCTOR DEVICE COMPRISING A POLYCRYSTALLINE SEMICONDUCTOR LAYER FORMED ON AN INSULATION LAYER HAVING DIFFERENT THICKNESS 审中-公开
    包含在具有不同厚度的绝缘层上形成的多晶半导体层的薄膜半导体器件

    公开(公告)号:US20140051218A1

    公开(公告)日:2014-02-20

    申请号:US14067454

    申请日:2013-10-30

    Abstract: In an organic light emitting diode (OLED) display and a manufacturing method thereof, the OLED display includes a substrate main body; an insulation layer pattern formed on the substrate main body, and including a first thickness layer and a second thickness layer thinner than the first thickness layer; a metal catalyst that is scattered on the first thickness layer of the insulation layer pattern; and a polycrystalline semiconductor layer formed on the insulation layer pattern, and divided into a first crystal area corresponding to the first thickness layer and to a portion of the second thickness layer adjacent to the first thickness layer and a second crystal area corresponding to the remaining part of the second thickness layer. The first crystal area of the polycrystalline semiconductor layer is crystallized through the metal catalyst, and the second crystal area of the polycrystalline semiconductor layer is solid phase crystallized.

    Abstract translation: 在有机发光二极管(OLED)显示器及其制造方法中,OLED显示器包括:基板主体; 绝缘层图案,形成在所述基板主体上,并且包括第一厚度层和比所述第一厚度层更薄的第二厚度层; 分散在绝缘层图案的第一厚度层上的金属催化剂; 以及形成在所述绝缘层图案上的多晶半导体层,并且被分成与所述第一厚度层相对应的第一晶体区域和与所述第一厚度层相邻的所述第二厚度层的一部分,以及与所述第一厚度层的剩余部分相对应的第二晶体区域 的第二厚度层。 多晶半导体层的第一晶体区域通过金属催化剂结晶,多晶半导体层的第二晶体区域是固相结晶化的。

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