公开(公告)号：US20140175423A1

公开(公告)日：2014-06-26

申请号：US13896045

申请日：2013-05-16

Applicant: Samsung Display Co., Ltd.

Inventor： Chang-Oh JEONG ,  Kyung Seop KIM ,  Hong Long NING ,  Byeong-Beom KIM ,  Joon Yong PARK ,  Jin Ho HWANG ,  Dong Min LEE

IPC: H01L27/12

CPC classification number: H01L27/1225 ,  H01L29/66969 ,  H01L29/7869

Abstract: A thin film transistor array panel is provided. The thin film transistor array panel includes a substrate, a seed layer positioned on the substrate, and a semiconductor layer positioned on the seed layer, wherein a lattice mismatch between the seed layer and the semiconductor layer is equal to or less than 1.4%.

Abstract translation: 提供薄膜晶体管阵列面板。 所述薄膜晶体管阵列面板包括基板，位于所述基板上的种子层和位于所述籽晶层上的半导体层，其中所述籽晶层与所述半导体层之间的晶格失配为1.4％以下。

公开(公告)号：US20130320344A1

公开(公告)日：2013-12-05

申请号：US13691307

申请日：2012-11-30

Applicant: SAMSUNG DISPLAY CO., LTD.

Inventor： Kyung Seop KIM ,  Byeong-Beom KIM ,  Joon Yong PARK ,  Chang Oh JEONG ,  Hong Long NING ,  Dong Min LEE

IPC: H01L29/786

CPC classification number: H01L29/78693 ,  H01L29/458 ,  H01L29/4908 ,  H01L29/7869

Abstract: A thin film transistor array panel includes: a semiconductor layer disposed on an insulation substrate; a gate electrode overlapping the semiconductor layer; a source electrode and a drain electrode overlapping the semiconductor layer; a first barrier layer disposed between the source electrode and the semiconductor layer; and a second barrier layer disposed between the drain electrode and the semiconductor layer, wherein the first barrier layer and the second barrier layer include nickel-chromium (NiCr).

Abstract translation: 薄膜晶体管阵列面板包括：设置在绝缘基板上的半导体层; 与半导体层重叠的栅电极; 与该半导体层重叠的源电极和漏电极; 设置在所述源电极和所述半导体层之间的第一阻挡层; 以及设置在所述漏电极和所述半导体层之间的第二阻挡层，其中所述第一阻挡层和所述第二阻挡层包括镍 - 铬（NiCr）。