DISPLAY APPARATUS
    1.
    发明公开
    DISPLAY APPARATUS 审中-公开

    公开(公告)号:US20230403899A1

    公开(公告)日:2023-12-14

    申请号:US18331824

    申请日:2023-06-08

    CPC classification number: H10K59/131 H10K59/351 H10K59/353 H10K59/1213

    Abstract: A display apparatus includes first and second data lines extending in a first direction, and an array of sub-pixels including first sub-pixels of a first color, second sub-pixels of a second color, and third sub-pixels of a third color, wherein the array of the sub-pixels includes a first sub-pixel column adjacent to the first data line, and in which one of the first sub-pixels, which is electrically connected to the first data line, and one of the second sub-pixels, which is electrically connected to the second data line, are alternately arranged in the first direction, and a second sub-pixel column adjacent to the second data line, and in which another of the first sub-pixels, which is electrically connected to the first data line, and another of the second sub-pixels, which is electrically connected to the second data line, are alternately arranged in the first direction.

    Display device
    3.
    发明授权

    公开(公告)号:US10170534B1

    公开(公告)日:2019-01-01

    申请号:US15883610

    申请日:2018-01-30

    Abstract: A display device includes: a substrate; a plurality of display elements in a display area of the substrate, where each of the plurality of display elements includes a pixel electrode, an opposite electrode, and an intermediate layer between the pixel electrode and the opposite electrode; a drive circuit on an outer side of the display area and including a thin film transistor; a first insulating layer on the drive circuit; a first power supply line layer on the first insulating layer and overlapping the drive circuit; a second insulating layer on the first power supply line layer; and a connection electrode layer on the second insulating layer, where the connection electrode layer electrically connects the first power supply line layer to the opposite electrode.

    Thin film transistor array substrate and organic light-emitting display apparatus including the same

    公开(公告)号:US10903248B2

    公开(公告)日:2021-01-26

    申请号:US16203874

    申请日:2018-11-29

    Abstract: A thin film transistor array substrate includes a substrate, at least one thin film transistor, a capacitor, an interlayer insulating layer, and a node connection line. The at least one thin film transistor is on the substrate. The capacitor is on the substrate and includes: a bottom electrode on the substrate; a top electrode overlapping the bottom electrode, the top electrode including an opening having a single closed curve shape; and a dielectric layer between the bottom electrode and the top electrode. The interlayer insulating layer covers the capacitor. The node connection line is on the interlayer insulating layer and electrically connects the capacitor to the at least one thin film transistor. An overlapping area of the bottom electrode and the top electrode is divided by the opening into two separate areas.

    Display device including a test unit

    公开(公告)号:US11557520B2

    公开(公告)日:2023-01-17

    申请号:US17101189

    申请日:2020-11-23

    Abstract: A display device includes a pixel connected to a data line, a data pad connected to the data line, and a first test area. The first test area includes a test control line transmitting a test control signal, a test signal line transmitting a test signal, and a first switch connected to the data pad. The first switch includes a gate electrode connected to the test control line, first and second semiconductor layers overlapping the gate electrode, a source electrode connected to the first and second semiconductor layers, and a drain electrode spaced from the source electrode and connected to the first and second semiconductor layers. The source electrode and the drain electrode are connected to the test signal line and data pad, respectively. One of the first or second semiconductor layers includes an oxide semiconductor and the other of the first or second semiconductor layer includes a silicon-based semiconductor.

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