公开(公告)号：US09747853B2

公开(公告)日：2017-08-29

申请号：US14639958

申请日：2015-03-05

Applicant: Samsung Display Co., Ltd.

Inventor： Hyoung-Rae Lee ,  Choong-Hwa Kim ,  Moon Ju Kim ,  Eun Suk Kim ,  Seok-Kun Yoon ,  Kwang Youl Lee ,  Jong-Won Choo

IPC: G09G5/00 ,  G09G3/36 ,  G02F1/1362

CPC classification number: G09G3/3655 ,  G02F1/136286 ,  G09G3/3696 ,  G09G2330/025 ,  G09G2330/04 ,  G09G2330/06

Abstract: A liquid crystal display according to an exemplary embodiment of the present disclosure includes: a first substrate where a pixel electrode is formed; a second substrate facing the first substrate; a liquid crystal layer provided between the first substrate and the second substrate; and a driving device connected with the first substrate, wherein the first substrate includes a pixel area where pixels emit light, and a load storage area provided between the pixel area and the driving device and constantly maintaining a load applied to the pixels in the pixel area.

公开(公告)号：US11011086B2

公开(公告)日：2021-05-18

申请号：US16448543

申请日：2019-06-21

Applicant: Samsung Display Co., Ltd.

Inventor： Jinwoo Park ,  Eun Suk Kim ,  Hoemi Kim ,  Kwangyoul Lee

IPC: G09G3/00 ,  G09G3/36

Abstract: A display device includes a display panel including a plurality of pixels, a power management circuit configured to generate an analog driving voltage, a correction data memory configured to store a plurality of unevenness correction data sets respectively corresponding to a plurality of analog driving voltage ranges, a controller configured to determine, among the plurality of analog driving voltage ranges, a current analog driving voltage range to which the analog driving voltage output from the power management circuit belongs, to select an unevenness correction data set corresponding to the current analog driving voltage range from the plurality of unevenness correction data sets stored in the correction data memory, and to correct image data based on the selected unevenness correction data set, and a source driver configured to receive the corrected image data from the controller, and to provide the plurality of pixels with data voltages corresponding to the image data.

公开(公告)号：US10446465B2

公开(公告)日：2019-10-15

申请号：US15804659

申请日：2017-11-06

Applicant: Samsung Display Co., Ltd.

Inventor： Eun Suk Kim ,  Moon Ju Kim ,  Jin Woo Park

IPC: H01L23/367 ,  H01L23/498 ,  H01L23/00 ,  H01L23/36 ,  G09G3/20

Abstract: Provided are chip-on-film package and display device including the same. The chip-on-film package comprises: a base film; a driving chip which is disposed on a surface of the base film; and a heat radiating member which is disposed on the driving chip and comprises a first heat radiating pad portion, a second heat radiating pad portion separated from the first heat radiating pad portion in a first direction, a connecting portion disposed between the first heat radiating pad portion and the second heat radiating pad portion, and one or more protrusions extending from the first heat radiating pad portion or the second heat radiating pad portion along an oblique direction in the first direction, wherein the connecting portion at least partially overlaps the driving chip.

公开(公告)号：US09828666B2

公开(公告)日：2017-11-28

申请号：US14463581

申请日：2014-08-19

Applicant: Samsung Display Co., Ltd.

Inventor： Hyoung-Rae Lee ,  Moon Ju Kim ,  Eun Suk Kim ,  Seok-Kun Yoon ,  Kwang Youl Lee ,  Jong-Won Choo

IPC: H01L21/02 ,  H01L29/66 ,  H01L29/786 ,  H01L27/12 ,  C23C14/08 ,  C23C14/35 ,  C23C14/56

CPC classification number: C23C14/08 ,  C23C14/086 ,  C23C14/352 ,  C23C14/562 ,  H01L21/02565 ,  H01L21/02631 ,  H01L27/1225 ,  H01L29/66969 ,  H01L29/7869 ,  H01L29/78696

Abstract: An exemplary embodiment provides a thin film transistor array panel, including: a substrate; an oxide semiconductor layer disposed on the substrate; an insulating layer disposed on the oxide semiconductor layer; and a pixel electrode disposed on the insulating layer. The oxide semiconductor layer includes a first layer and a second layer disposed on the first layer, the second layer includes an oxide semiconductor including silicon, and the second layer contacts the insulating layer.