公开(公告)号：US20220278288A1

公开(公告)日：2022-09-01

申请号：US17744543

申请日：2022-05-13

Applicant: Samsung Display Co., LTD.

Inventor： Yeoung Keol WOO ,  Yung Bin CHUNG ,  Chul Min BAE ,  Ji Hye HAN ,  Eun Jin KWAK

IPC: H01L51/00 ,  H01L27/32 ,  H01L51/56

Abstract: A method of manufacturing a display device includes providing an inorganic layer on a carrier substrate, providing a first flexible substrate on the inorganic layer, providing a first shielding layer including a metal on the first flexible substrate, providing a first barrier layer on the first shielding layer, and providing a thin film transistor layer on the first barrier layer. The inorganic layer includes at least one material selected from silicon nitride (SiNx), silicon oxide (SiOx), and silicon oxynitride (SiOxNy), and a thickness of the inorganic layer is in a range from about 10 Å to about 6000 Å.

公开(公告)号：US20220140262A1

公开(公告)日：2022-05-05

申请号：US17404004

申请日：2021-08-17

Applicant: Samsung Display Co., Ltd.

Inventor： Chul Min BAE ,  Eun Jin KWAK ,  Jin Suk LEE ,  Jung Yun JO ,  Ji Hye HAN ,  Young In HWANG

IPC: H01L51/00 ,  H01L27/32 ,  H01L51/52 ,  H01L51/56 ,  C23C16/40 ,  C23C16/34 ,  C23C14/18 ,  C23C28/00

Abstract: A display device and a method of manufacturing the same are provided. The display device, comprises a first base substrate, a first barrier layer disposed on the first base substrate, a second base substrate disposed on the first barrier layer, at least one transistor disposed on the second base substrate, and an organic light emitting diode disposed on the at least one transistor, wherein the first barrier layer includes a silicon oxide, and has an adhesion force of 200 gf/inch or more to the second base substrate.

公开(公告)号：US20210050536A1

公开(公告)日：2021-02-18

申请号：US16906866

申请日：2020-06-19

Applicant: Samsung Display Co., LTD.

Inventor： Yeoung Keol WOO ,  Yung Bin CHUNG ,  Chul Min BAE ,  Ji Hye HAN ,  Eun Jin KWAK

IPC: H01L51/00 ,  H01L27/32 ,  H01L51/56

Abstract: A method of manufacturing a display device includes providing an inorganic layer on a carrier substrate, providing a first flexible substrate on the inorganic layer, providing a first shielding layer including a metal on the first flexible substrate, providing a first barrier layer on the first shielding layer, and providing a thin film transistor layer on the first barrier layer. The inorganic layer includes at least one material selected from silicon nitride (SiNx), silicon oxide (SiOx), and silicon oxynitride (SiOxNy), and a thickness of the inorganic layer is in a range from about 10 Å to about 6000 Å.