公开(公告)号：US20190157367A1

公开(公告)日：2019-05-23

申请号：US16250642

申请日：2019-01-17

Applicant: Samsung Display Co., Ltd.

Inventor： DONG HEE LEE ,  Hyun Ju Kang ,  Sang Won Shin

IPC: H01L27/32 ,  H01L29/423 ,  H01L27/12 ,  H01L29/49 ,  H01L29/786

CPC classification number: H01L27/3262 ,  H01L27/1225 ,  H01L27/124 ,  H01L27/1255 ,  H01L27/1288 ,  H01L29/42384 ,  H01L29/4908 ,  H01L29/518 ,  H01L29/78606 ,  H01L29/78618 ,  H01L29/78645 ,  H01L29/7869 ,  H01L29/78696 ,  H01L2227/323

Abstract: An exemplary embodiment of the present invention provides a thin film transistor array panel and an organic light emitting diode display including the same including a substrate, a semiconductor disposed on the substrate, a first gate insulation layer disposed on the semiconductor, and a first diffusion barrier layer disposed on the first gate insulation layer. A second diffusion barrier layer is disposed on a lateral surface of the first diffusion barrier layer. A first gate electrode is disposed on the first diffusion barrier layer. A source electrode and a drain electrode are connected to the semiconductor. The first diffusion barrier layer comprises a metal, and the second diffusion barrier layer comprises a metal oxide including the metal.

公开(公告)号：US20170358688A1

公开(公告)日：2017-12-14

申请号：US15436011

申请日：2017-02-17

Applicant: SAMSUNG DISPLAY CO., LTD.

Inventor： DONG HEE LEE ,  GWANG MIN CHA ,  DONG MIN LEE

IPC: H01L29/786 ,  H01L27/12 ,  G02F1/1362 ,  G02F1/1368 ,  H01L27/32

CPC classification number: H01L29/78633 ,  G02F1/136209 ,  G02F1/136227 ,  G02F1/136286 ,  G02F1/1368 ,  G02F2001/13685 ,  H01L27/1218 ,  H01L27/124 ,  H01L27/1244 ,  H01L27/3248 ,  H01L27/3262 ,  H01L27/3272 ,  H01L27/3276 ,  H01L29/4908 ,  H01L29/78603 ,  H01L29/78618 ,  H01L29/78648 ,  H01L29/7869

Abstract: A transistor is positioned on a substrate. The transistor includes a semiconductor layer. A buffer layer is positioned between the substrate and the semiconductor layer of the transistor, including an insulating material. A bottom layer is positioned between the substrate and the buffer layer. The bottom layer and the semiconductor layer overlap each other. The bottom layer includes a first layer, a second layer, and a third layer that are stacked on each other in a direction away from the substrate.