公开(公告)号：US11011594B2

公开(公告)日：2021-05-18

申请号：US16369615

申请日：2019-03-29

Applicant: Samsung Display Co., Ltd.

Inventor： Kiwook Kim ,  Chul kyu Kang ,  Wonkyu Kwak ,  Kwangmin Kim ,  Joongsoo Moon

IPC: H01L27/32 ,  G09G3/3266 ,  G09G3/3291 ,  H01L27/12 ,  H01L29/786

Abstract: A display apparatus includes a substrate including a display area for displaying an image, a first thin film transistor in the display area and including a first semiconductor layer having a silicon semiconductor and a first gate electrode insulated from the first semiconductor layer, a first interlayer insulating layer covering the first gate electrode and having a first contact hole extending therethrough, and a second thin film transistor on the first interlayer insulating layer and including a second semiconductor layer having an oxide semiconductor and a second gate electrode insulated from the second semiconductor layer. A portion of the second semiconductor layer extends into a first contact hole and is electrically connected to the first semiconductor layer.

公开(公告)号：US11937456B2

公开(公告)日：2024-03-19

申请号：US17322257

申请日：2021-05-17

Applicant: Samsung Display Co., Ltd.

Inventor： Kiwook Kim ,  Chul kyu Kang ,  Wonkyu Kwak ,  Kwangmin Kim ,  Joongsoo Moon

IPC: H10K59/121 ,  G09G3/3266 ,  G09G3/3291 ,  H01L27/12 ,  H10K59/131 ,  H01L29/786

CPC classification number: H10K59/1213 ,  G09G3/3266 ,  G09G3/3291 ,  H01L27/1222 ,  H01L27/1225 ,  H01L27/124 ,  H10K59/1216 ,  H10K59/131 ,  G09G2300/0426 ,  H01L29/78651 ,  H01L29/7869

Abstract: A display apparatus includes a substrate including a display area for displaying an image, a first thin film transistor in the display area and including a first semiconductor layer having a silicon semiconductor and a first gate electrode insulated from the first semiconductor layer, a first interlayer insulating layer covering the first gate electrode and having a first contact hole extending therethrough, and a second thin film transistor on the first interlayer insulating layer and including a second semiconductor layer having an oxide semiconductor and a second gate electrode insulated from the second semiconductor layer. A portion of the second semiconductor layer extends into a first contact hole and is electrically connected to the first semiconductor layer.