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    DISPLAY APPARATUS INCLUDING A BLOCKING LAYER AND METHOD OF MANUFACTURING THE SAME
    4.
    发明申请
    DISPLAY APPARATUS INCLUDING A BLOCKING LAYER AND METHOD OF MANUFACTURING THE SAME 审中-公开

    公开(公告)号：US20200227494A1

    公开(公告)日：2020-07-16

    申请号：US16551076

    申请日：2019-08-26

    Applicant: SAMSUNG DISPLAY CO., LTD.

    Inventor： Injun Bae ,  Chulho Kim ,  Yunhwan Park ,  Jin Jeon ,  Beohmrock Choi

    IPC: H01L27/32

    Abstract: A display apparatus includes: a substrate including a display area and a sensor area, wherein the display area includes a first pixel, and the sensor area includes a second pixel and a transmission portion; a sensor configured to transmit a signal through the substrate via the transmission portion, wherein the second pixel includes second thin-film transistor including a semiconductor layer, and wherein a blocking layer is disposed between the sensor and the second thin-film transistor, wherein the blocking layer covers the semiconductor layer.

    Display device
    5.
    发明授权
    Display device 有权

    公开(公告)号：US12057057B2

    公开(公告)日：2024-08-06

    申请号：US18140996

    申请日：2023-04-28

    Applicant: Samsung Display Co., LTD.

    Inventor： Woori Seo ,  Yunhwan Park ,  Yongjae Kim ,  Yoonjee Shin

    IPC: G09G3/32

    CPC classification number: G09G3/32 ,  G09G2310/0278 ,  G09G2310/08 ,  G09G2320/0271

    Abstract: A display device includes a display panel including a first sub-pixel which displays a first color and is connected to a first data line and a gate line, a gate driver which provides a gate signal to the gate line, a source driver which provides a data voltage to the first data line in a display scan period of a frame and provides a first self-scan voltage to the first data line in a self-scan period of the frame, and a timing controller which calculates a first ratio of each of grayscale values of first color image data for the first color of the frame and determines the first self-scan voltage based on the first ratio.

    Display panel and display apparatus including sensor area
    7.
    发明授权
    Display panel and display apparatus including sensor area 有权

    公开(公告)号：US11227907B2

    公开(公告)日：2022-01-18

    申请号：US16745901

    申请日：2020-01-17

    Applicant: SAMSUNG DISPLAY CO., LTD.

    Inventor： Injun Bae ,  Chulho Kim ,  Yunhwan Park ,  Woori Seo ,  Dongbum Lee ,  Jin Jeon

    IPC: H01L27/32 ,  H01L51/00

    Abstract: A display apparatus has an enlarged display area so that an image can be displayed in a sensor area. The display apparatus includes: a first base layer that includes a display area that includes a plurality of main pixels and a sensor area that includes a plurality of auxiliary pixels and a transmission portion; a conductive layer positioned on the first base layer and that corresponds to the plurality of auxiliary pixels; and a second base layer positioned on the first base layer with the conductive layer positioned between the second base layer and the first base layer. A resolution of an image displayed by the sensor area is lower than a resolution of an image displayed by the display area.

    DISPLAY PANEL AND DISPLAY APPARATUS INCLUDING THE SAME
    8.
    发明申请
    DISPLAY PANEL AND DISPLAY APPARATUS INCLUDING THE SAME 审中-公开

    公开(公告)号：US20200286972A1

    公开(公告)日：2020-09-10

    申请号：US16719418

    申请日：2019-12-18

    Applicant: SAMSUNG DISPLAY CO., LTD.

    Inventor： WOORI SEO ,  Injun Bae ,  Donghwi Kim ,  Chulho Kim ,  Yunhwan Park ,  Dongbeom Lee ,  Jin Jeon

    IPC: H01L27/32 ,  H01L51/00 ,  G09G3/3266 ,  G09G3/3225

    Abstract: A display panel includes: a substrate that includes a display area and a sensor area, where the display area includes a main pixel and the sensor area includes an auxiliary pixel, where the main pixel is electrically connected to a main pixel circuit and the auxiliary pixel is electrically connected to an auxiliary pixel circuit, where the auxiliary pixel circuit includes a first auxiliary thin film transistor that includes a first semiconductor layer that includes an oxide semiconductor material and a first gate electrode that overlaps the first semiconductor layer, and a second auxiliary thin film transistor that including a second semiconductor layer that includes Low Temperature Poly-Silicon (LTPS) and a second gate electrode that overlaps the second semiconductor layer.

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