公开(公告)号：US11985854B2

公开(公告)日：2024-05-14

申请号：US16719418

申请日：2019-12-18

Applicant: SAMSUNG DISPLAY CO., LTD.

Inventor： Woori Seo ,  Injun Bae ,  Donghwi Kim ,  Chulho Kim ,  Yunhwan Park ,  Dongbeom Lee ,  Jin Jeon

IPC: H01L51/00 ,  G09G3/3225 ,  G09G3/3266 ,  H10K59/121 ,  H10K59/131 ,  H10K77/10 ,  H01L27/12

CPC classification number: H10K59/1213 ,  G09G3/3225 ,  G09G3/3266 ,  H10K59/1216 ,  H10K59/131 ,  H10K77/10 ,  G09G2300/0426 ,  G09G2300/0439 ,  H01L27/1225 ,  H01L27/1255

Abstract: A display panel includes: a substrate that includes a display area and a sensor area, where the display area includes a main pixel and the sensor area includes an auxiliary pixel, where the main pixel is electrically connected to a main pixel circuit and the auxiliary pixel is electrically connected to an auxiliary pixel circuit, where the auxiliary pixel circuit includes a first auxiliary thin film transistor that includes a first semiconductor layer that includes an oxide semiconductor material and a first gate electrode that overlaps the first semiconductor layer, and a second auxiliary thin film transistor that including a second semiconductor layer that includes Low Temperature Poly-Silicon (LTPS) and a second gate electrode that overlaps the second semiconductor layer.

公开(公告)号：US20200286972A1

公开(公告)日：2020-09-10

申请号：US16719418

申请日：2019-12-18

Applicant: SAMSUNG DISPLAY CO., LTD.

Inventor： WOORI SEO ,  Injun Bae ,  Donghwi Kim ,  Chulho Kim ,  Yunhwan Park ,  Dongbeom Lee ,  Jin Jeon

IPC: H01L27/32 ,  H01L51/00 ,  G09G3/3266 ,  G09G3/3225

Abstract: A display panel includes: a substrate that includes a display area and a sensor area, where the display area includes a main pixel and the sensor area includes an auxiliary pixel, where the main pixel is electrically connected to a main pixel circuit and the auxiliary pixel is electrically connected to an auxiliary pixel circuit, where the auxiliary pixel circuit includes a first auxiliary thin film transistor that includes a first semiconductor layer that includes an oxide semiconductor material and a first gate electrode that overlaps the first semiconductor layer, and a second auxiliary thin film transistor that including a second semiconductor layer that includes Low Temperature Poly-Silicon (LTPS) and a second gate electrode that overlaps the second semiconductor layer.