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公开(公告)号：US20240107840A1
公开(公告)日：2024-03-28
申请号：US18526207
申请日：2023-12-01
Applicant: Samsung Display Co., LTD.
Inventor： Se Wan SON , Moo Soon KO , Kyung Hyun BAEK , Seok Je SEONG , Jae Hyun LEE , Jeong-Soo LEE , Ji Seon LEE , Yoon-Jong CHO
IPC: H10K59/131 , H10K59/124 , H10K59/126
CPC classification number: H10K59/131 , H10K59/124 , H10K59/126 , G09G3/32 , G09G2300/0809
Abstract: A display device includes a first semiconductor layer disposed on a substrate; a first insulating layer disposed on the first semiconductor layer; a scan line disposed on the first insulating layer; a second insulating layer on the scan line; an inverted scan line on the second insulating layer; a third insulating layer disposed on the inverted scan line; a second semiconductor layer disposed on the third insulating layer; a fourth insulating layer disposed on the second semiconductor layer; an initializing voltage line disposed on the fourth insulating layer and overlapping the scan line; a first transistor including a channel disposed in the first semiconductor layer and receiving a gate signal through the scan line; and a second transistor including a channel disposed in the second semiconductor layer and receiving a gate signal through the inverted scan line.
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公开(公告)号：US20210359067A1
公开(公告)日：2021-11-18
申请号：US17202604
申请日：2021-03-16
Applicant: Samsung Display Co., Ltd.
Inventor： Yoon-Jong CHO , Tetsuhiro TANAKA , Young-In HWANG
Abstract: A display panel includes a first organic film layer, a first barrier layer disposed on first organic film layer, a shielding pattern disposed on the first barrier layer, a second barrier layer covering the shielding pattern and disposed on first barrier layer, a first active pattern disposed on the second barrier layer and overlapping the shielding pattern in a plan view, a gate electrode disposed on the first active pattern, an emission control line disposed on the first active pattern and adjacent to a first side of the gate electrode in the plan view, an upper compensation control line disposed on the emission control line and adjacent to a second side of gate electrode in the plan view, and a second active pattern disposed on the emission control line.
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公开(公告)号：US20230171994A1
公开(公告)日：2023-06-01
申请号：US17879051
申请日：2022-08-02
Applicant: Samsung Display Co., Ltd.
Inventor： Wang Woo LEE , Sung Ho KIM , Seok Je SEONG , Jin Sung AN , Min Woo WOO , Seung Hyun LEE , Ji Seon LEE , Yoon-Jong CHO
CPC classification number: H01L51/5284 , H01L27/3234 , H01L27/3276
Abstract: The present disclosure relates to a light emitting display device that includes a transparent display area including a light transmission area and a normal display area, wherein the transparent display area includes: an anode including an opening; a first light blocking part filling the opening; and a second light blocking part positioned along an exterior side of the anode. A height of a highest part of the first light blocking part is different than a height of a highest part of the second light blocking part.
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公开(公告)号：US20200066765A1
公开(公告)日：2020-02-27
申请号：US16436863
申请日：2019-06-10
Applicant: Samsung Display Co., LTD.
Inventor： Yoon-Jong CHO , Semyung KWON , Ji Yong PARK , Seok Je SEONG
IPC: H01L27/12
Abstract: A display device including a first active pattern including a silicon semiconductor, a first insulation layer covering the first active pattern, a first gate electrode disposed on the first insulation layer, a second insulation layer covering the first gate electrode, a gate wiring pattern disposed on the second insulation layer and including a lower layer and an upper layer, the lower layer including titanium or titanium alloy, the upper layer including molybdenum or molybdenum alloy, a third insulation layer covering the gate wiring pattern, and a second active pattern disposed on the third insulation layer and comprising an oxide semiconductor.
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公开(公告)号：US20230131807A1
公开(公告)日：2023-04-27
申请号：US18085749
申请日：2022-12-21
Applicant: Samsung Display Co., LTD.
Inventor： Yoon-Jong CHO , Seok Je SEONG , Seong Jun LEE
IPC: H10K59/126 , H10K59/121 , G09G3/3233
Abstract: A display device includes a polycrystalline semiconductor including a channel and electrodes of a driving transistor; a gate electrode of the driving transistor on the channel of the driving transistor; a first storage electrode on the gate electrode of the driving transistor; a light blocking layer of a first transistor and a light blocking layer of a second transistor; an oxide semiconductor including a channel and electrodes of the first transistor, and a channel and electrodes of the second transistor; a gate electrode of the first transistor on the channel of the first transistor; and a gate electrode of the second transistor on the channel of the second transistor. The light blocking layer of the first transistor and the first storage electrode are on a same layer, and the light blocking layer of the second transistor and the gate electrode of the driving transistor are on a same layer.
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Patent Agency Ranking
公开(公告)号：US20210074793A1
公开(公告)日：2021-03-11
申请号：US16844435
申请日：2020-04-09
Applicant: Samsung Display Co., Ltd.
Inventor： Kyunghyun BAEK , Seok Je SEONG , Hyeonsik KIM , Yoonjee SHIN , Jae Hyun LEE , Woo Ho JEONG , Yoon-Jong CHO
IPC: H01L27/32 , H01L29/786
Abstract: A display panel includes two or more gate layers including a plurality of gate patterns extending in a first direction and one or more source-drain layers including a plurality of source-drain patterns extending in a second direction crossing the first direction. The gate patterns of the two or more gate layers are curved or bent along a hole surrounding area corresponding to a periphery of a hole in an active area. The source-drain patterns of the one or more source-drain layers are curved or bent along the hole surrounding area. The gate patterns of at least one of the two or more gate layers overlap the source-drain patterns of at least one of the one or more source-drain layers in a thickness direction of the display panel in the hole surrounding area.
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公开(公告)号：US20210265449A1
公开(公告)日：2021-08-26
申请号：US17109771
申请日：2020-12-02
Applicant: Samsung Display Co., LTD.
Inventor： Se Wan SON , Moo Soon KO , Kyung Hyun BAEK , Seok Je SEONG , Jae Hyun LEE , Jeong-Soo LEE , Ji Seon LEE , Yoon-Jong CHO
IPC: H01L27/32
Abstract: A display device includes a first semiconductor layer disposed on a substrate; a first insulating layer disposed on the first semiconductor layer; a scan line disposed on the first insulating layer; a second insulating layer on the scan line; an inverted scan line on the second insulating layer; a third insulating layer disposed on the inverted scan line; a second semiconductor layer disposed on the third insulating layer; a fourth insulating layer disposed on the second semiconductor layer; an initializing voltage line disposed on the fourth insulating layer and overlapping the scan line; a first transistor including a channel disposed in the first semiconductor layer and receiving a gate signal through the scan line; and a second transistor including a channel disposed in the second semiconductor layer and receiving a gate signal through the inverted scan line.
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公开(公告)号：US20210265442A1
公开(公告)日：2021-08-26
申请号：US16997385
申请日：2020-08-19
Applicant: Samsung Display Co., LTD.
Inventor： Yoon-Jong CHO , Seok Je SEONG , Seong Jun LEE
IPC: H01L27/32 , G09G3/3233
Abstract: A display device includes a polycrystalline semiconductor including a channel and electrodes of a driving transistor; a gate electrode of the driving transistor on the channel of the driving transistor; a first storage electrode on the gate electrode of the driving transistor; a light blocking layer of a first transistor and a light blocking layer of a second transistor; an oxide semiconductor including a channel and electrodes of the first transistor, and a channel and electrodes of the second transistor; a gate electrode of the first transistor on the channel of the first transistor; and a gate electrode of the second transistor on the channel of the second transistor. The light blocking layer of the first transistor and the first storage electrode are on a same layer, and the light blocking layer of the second transistor and the gate electrode of the driving transistor are on a same layer.
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公开(公告)号：US20240315101A1
公开(公告)日：2024-09-19
申请号：US18676473
申请日：2024-05-28
Applicant: SAMSUNG DISPLAY CO., LTD.
Inventor： Kyunghyun BAEK , Seok Je SEONG , Hyeonsik KIM , Yoonjee SHIN , Jae Hyun LEE , Woo Ho JEONG , Yoon-Jong CHO
IPC: H10K59/131 , H01L27/12 , H01L29/786 , H10K59/121 , H10K59/124
CPC classification number: H10K59/131 , H01L29/78645 , H10K59/1213 , H10K59/124 , H01L27/124 , H01L27/1248
Abstract: A display panel includes two or more gate layers including a plurality of gate patterns extending in a first direction and one or more source-drain layers including a plurality of source-drain patterns extending in a second direction crossing the first direction. The gate patterns of the two or more gate layers are curved or bent along a hole surrounding area corresponding to a periphery of a hole in an active area. The source-drain patterns of the one or more source-drain layers are curved or bent along the hole surrounding area. The gate patterns of at least one of the two or more gate layers overlap the source-drain patterns of at least one of the one or more source-drain layers in a thickness direction of the display panel in the hole surrounding area.
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公开(公告)号：US20230389371A1
公开(公告)日：2023-11-30
申请号：US18446874
申请日：2023-08-09
Applicant: Samsung Display Co., LTD.
Inventor： Yoon-Jong CHO , Seok Je SEONG , Seong Jun LEE
IPC: H10K59/126 , G09G3/3233 , H10K59/121
CPC classification number: H10K59/126 , G09G3/3233 , H10K59/1213 , G09G2310/0254 , H01L27/1225
Abstract: A display device includes a polycrystalline semiconductor including a channel and electrodes of a driving transistor; a gate electrode of the driving transistor on the channel of the driving transistor; a first storage electrode on the gate electrode of the driving transistor; a light blocking layer of a first transistor and a light blocking layer of a second transistor; an oxide semiconductor including a channel and electrodes of the first transistor, and a channel and electrodes of the second transistor; a gate electrode of the first transistor on the channel of the first transistor; and a gate electrode of the second transistor on the channel of the second transistor. The light blocking layer of the first transistor and the first storage electrode are on a same layer, and the light blocking layer of the second transistor and the gate electrode of the driving transistor are on a same layer.
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