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    DISPLAY APPARATUS
    2.
    发明申请
    DISPLAY APPARATUS 有权

    公开(公告)号：US20210134916A1

    公开(公告)日：2021-05-06

    申请号：US17029843

    申请日：2020-09-23

    Applicant: Samsung Display Co., Ltd.

    Inventor： Dongmin LEE ,  Sukyoung YANG ,  Dokeun SONG ,  Hyuneok SHIN

    IPC: H01L27/32

    Abstract: A display apparatus includes a thin film transistor on the substrate, the thin film transistor including a first semiconductor layer and a first gate electrode overlapping the first semiconductor layer wherein a first gate insulating layer is disposed between the first semiconductor layer and the first gate electrode, and a storage capacitor including a lower electrode including a first lower layer and a first upper layer stacked each other and an upper electrode including a second lower layer and a second upper layer stacked each other, wherein the upper electrode overlaps the lower electrode, and a second gate insulating layer is disposed between the upper electrode and the lower electrode, a display element electrically connected to the thin film transistor, wherein the second upper layer has a thickness greater than a thickness of the first upper layer.

    METHOD OF MANUFACTURING DISPLAY APPARATUS
    3.
    发明公开
    METHOD OF MANUFACTURING DISPLAY APPARATUS 审中-公开

    公开(公告)号：US20240324280A1

    公开(公告)日：2024-09-26

    申请号：US18401790

    申请日：2024-01-02

    Applicant: Samsung Display Co., LTD.

    Inventor： Sukyoung YANG ,  Joonyong PARK ,  Hyuneok SHIN ,  Dongmin LEE

    IPC: H10K59/12 ,  H10K59/122

    CPC classification number: H10K59/1201 ,  H10K59/122

    Abstract: A method of manufacturing a display apparatus includes: forming a subpixel electrode; forming a conductive bank layer including a first opening overlapping the subpixel electrode, disposed over the subpixel electrode; forming an insulating layer between a peripheral portion of the subpixel electrode and the conductive bank layer and including an opening overlapping the first opening; forming an intermediate layer overlapping the subpixel electrode; forming an opposite electrode overlapping the subpixel electrode; continuously arranging an inorganic passivation layer-forming material on the opposite electrode and the conductive bank layer; forming, on a portion of the inorganic passivation layer-forming material, a first metal layer and a second metal layer, which overlap the first opening; and forming an inorganic passivation layer by etching a portion of the inorganic passivation layer-forming material, which does not overlap the first metal layer and the second metal layer, by using the first and second metal layers as masks.

    METHOD FOR FABRICATING ARRAY SUBSTRATE AND FABRICATION APPARATUS USED THEREFOR
    8.
    发明申请
    METHOD FOR FABRICATING ARRAY SUBSTRATE AND FABRICATION APPARATUS USED THEREFOR 有权
    用于制造阵列基板的方法和其使用的制造装置

    公开(公告)号：US20130280838A1

    公开(公告)日：2013-10-24

    申请号：US13716972

    申请日：2012-12-17

    Applicant: SAMSUNG DISPLAY CO., LTD.

    Inventor： SANGWON SHIN ,  Hyunju KANG ,  Sangwoo SOHN ,  Sukyoung YANG ,  Changoh JEONG

    IPC: H01L29/66 ,  H01L21/324

    CPC classification number: H01L29/66742 ,  H01L21/324 ,  H01L21/67109 ,  H01L21/67201 ,  H01L21/67745 ,  H01L27/1262

    Abstract: Provided is a method for fabricating an array substrate. The method for fabricating the array substrate includes forming a semiconductor layer on a substrate, forming a gate electrode which is insulated from the semiconductor layer, forming source and drain electrodes which are insulated from the gate electrode and connected to the semiconductor layer, and forming a pixel electrode connected to the drain electrode. Here, at least one of the forming of the gate electrode, the forming of the source and drain electrodes, and the forming of the pixel electrode includes forming a conductive layer on the substrate, cooling the substrate on which the conductive layer is formed to a temperature of no greater than about 0° C., heating the cooled substrate, and patterning the conductive layer.

    Abstract translation: 提供一种制造阵列基板的方法。 制造阵列基板的方法包括在基板上形成半导体层，形成与半导体层绝缘的栅电极，形成与栅电极绝缘并连接到半导体层的源电极和漏电极，并形成 像素电极连接到漏电极。 这里，形成栅电极，形成源电极和漏电极以及形成像素电极中的至少一个包括在衬底上形成导电层，将形成有导电层的衬底冷却到 温度不大于约0℃，加热冷却的基底，并图形化导电层。

    DISPLAY PANEL AND DISPLAY DEVICE
    9.
    发明申请
    DISPLAY PANEL AND DISPLAY DEVICE 有权

    公开(公告)号：US20220059636A1

    公开(公告)日：2022-02-24

    申请号：US17183641

    申请日：2021-02-24

    Applicant: SAMSUNG DISPLAY CO., LTD.

    Inventor： Dokeun SONG ,  Hyunah SUNG ,  Sukyoung YANG ,  Dongmin LEE ,  Hyuneok SHIN

    IPC: H01L27/32

    Abstract: A display panel includes a substrate including a component area, a display area at least partially surrounding the component area, and a first non-display area at least partially surrounding the display area. A first wiring is in the display area and extends in a first direction to face the component area. A second wiring is in the display area and extends in the first direction to face the component area. The second wiring is spaced apart from the first wiring with the component area therebetween. A pixel circuit is connected to one of the first and second wirings and includes at least one thin-film transistor. A display element is connected to the pixel circuit. A cross-sectional area of the first wiring crossing in a second direction that is perpendicular to the first direction is different from a cross-sectional area of the second wiring crossing in the second direction.

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