DISPLAY APPARATUS AND METHOD OF MANUFACTURING THE SAME

    公开(公告)号:US20220173186A1

    公开(公告)日:2022-06-02

    申请号:US17382425

    申请日:2021-07-22

    Abstract: Provided are a display apparatus with improved display quality and a method of manufacturing the same, the display apparatus including: a substrate including a first base layer, a second base layer arranged over the first base layer, and a first barrier layer disposed between the first base layer and the second base layer; a first thin-film transistor arranged over the substrate and including a first semiconductor layer and a first gate electrode, wherein the first barrier layer includes a first sub-layer and a second sub-layer disposed on the first sub-layer, the first sub-layer including an inorganic material and the second sub-layer including amorphous silicon and crystallized silicon.

    DISPLAY DEVICE AND METHOD OF MANUFACTURING DISPLAY DEVICE

    公开(公告)号:US20210066424A1

    公开(公告)日:2021-03-04

    申请号:US16837652

    申请日:2020-04-01

    Abstract: A display device includes: a substrate; a first insulating layer disposed on the substrate and that includes an inorganic insulating material; an oxide semiconductor layer disposed on the first insulating layer; a second insulating layer disposed on the oxide semiconductor layer and that includes an inorganic insulating material; and a third insulating layer disposed on a gate electrode disposed on the second insulating layer and that includes an inorganic insulating material. The oxide semiconductor layer includes a first conductive region, a second conductive region, and a channel region located between the first conductive region and the second conductive region, and a value in the channel region of the oxide semiconductor layer of HC according to equation (1) is less than 30%.

    Display apparatus
    6.
    发明授权

    公开(公告)号:US11315998B2

    公开(公告)日:2022-04-26

    申请号:US16883399

    申请日:2020-05-26

    Abstract: A display apparatus that includes a substrate, a first thin-film transistor and a second, thin-film transistor disposed on the substrate at different distances from a top surface of the substrate. A display device is electrically connected to the first thin-film transistor. The first thin-film transistor includes a first semiconductor layer in polycrystalline silicon and a first gate electrode that overlaps a channel region of the first semiconductor layer in a direction of a thickness of the substrate. The second thin-film transistor includes a second semiconductor layer including an oxide semiconductor. The first gate electrode has a stacked structure including a first layer and a second layer. The second layer includes titanium and the first layer includes a different material from the second layer.

    Organic light-emitting display apparatus

    公开(公告)号:US11233103B2

    公开(公告)日:2022-01-25

    申请号:US16541467

    申请日:2019-08-15

    Abstract: An organic light-emitting display apparatus includes a substrate; thin film transistors; a protective layer that includes a plurality of concave-convex units disposed in a pixel area; an organic light-emitting device disposed on the protective layer; and an encapsulation unit that covers the organic light-emitting device. Each of the concave-convex units protrudes from a surface of the protective layer. The organic light-emitting device includes a pixel electrode, an emission layer, and an opposite layer sequentially stacked on the concave-convex unit, and a distance between the pixel electrode and the opposite electrode is determined by 5%≤(a/b)≤18%, wherein ‘a’ is a vertical distance with respect to the surface of the protective layer between the pixel electrode and the opposite electrode and ‘b’ is a minimum distance between the pixel electrode and the opposite electrode.

Patent Agency Ranking