公开(公告)号：US11315998B2

公开(公告)日：2022-04-26

申请号：US16883399

申请日：2020-05-26

Applicant: SAMSUNG DISPLAY CO., LTD.

Inventor： Jaebum Han ,  Younggil Park ,  Junghwa Park ,  Nari Ahn ,  Sooim Jeong ,  Kinam Kim ,  Moonsung Kim

IPC: H01L27/14 ,  H01L27/32 ,  H01L27/12 ,  H01L29/786 ,  H01L29/49

Abstract: A display apparatus that includes a substrate, a first thin-film transistor and a second, thin-film transistor disposed on the substrate at different distances from a top surface of the substrate. A display device is electrically connected to the first thin-film transistor. The first thin-film transistor includes a first semiconductor layer in polycrystalline silicon and a first gate electrode that overlaps a channel region of the first semiconductor layer in a direction of a thickness of the substrate. The second thin-film transistor includes a second semiconductor layer including an oxide semiconductor. The first gate electrode has a stacked structure including a first layer and a second layer. The second layer includes titanium and the first layer includes a different material from the second layer.