公开(公告)号：US20170064297A1

公开(公告)日：2017-03-02

申请号：US15058659

申请日：2016-03-02

Applicant: Samsung Display Co., LTD.

Inventor： Joon-Geol KIM ,  Si-Joon KIM ,  Hee-Seon KIM

IPC: H04N17/00

CPC classification number: H04N17/004 ,  G09G3/006 ,  G09G2330/10

Abstract: An array test device for a display panel includes a stage on which the display panel including a plurality of pixel circuits is disposed, a contact unit including a plurality of probe pins, an adjustment unit which adjusts the contact unit such that the probe pins contact a plurality of pads of the display panel, and a testing unit which applies an array test signal to the pixel circuits of the display panel through the probe pins and the pads, receives a test result signal from the pixel circuits through the pads and the probe pins, generates waveform information representing a waveform of the test result signal, and determines whether the pixel circuits are defective based on the waveform information.

Abstract translation: 一种用于显示面板的阵列测试装置，包括：其上设置有包括多个像素电路的显示面板的台，包括多个探针的接触单元，调节单元，使得探针与 显示面板的多个焊盘和通过探针和焊盘将阵列测试信号施加到显示面板的像素电路的测试单元，通过焊盘和探针引脚从像素电路接收测试结果信号 产生表示测试结果信号的波形的波形信息，并基于波形信息确定像素电路是否有缺陷。

公开(公告)号：US20150064839A1

公开(公告)日：2015-03-05

申请号：US14333744

申请日：2014-07-17

Applicant: SAMSUNG DISPLAY CO., LTD. ,  Industry-Academic Cooperation Foundation, Yonsei University

Inventor： Chaun-Gi CHOI ,  Yeon-Gon MO ,  Hyun-Jae KIM ,  Hyun-Soo LIM ,  Si-Joon KIM ,  Tae-Soo JUNG ,  You-Seung RIM

IPC: H01L29/24 ,  H01L21/02

CPC classification number: H01L29/24 ,  H01L21/02565 ,  H01L21/02628 ,  H01L29/66969 ,  H01L29/78693

Abstract: A method of forming a tin oxide semiconductor thin film includes preparing a precursor solution including a tin oxide semiconductor, coating the precursor solution on a substrate; and performing a heat treatment on the substrate coated with the precursor solution. A tin compound having a different tin valence according to a semiconductor type of the tin oxide semiconductor may be used in the precursor solution.

Abstract translation: 形成氧化锡半导体薄膜的方法包括制备包含氧化锡半导体的前体溶液，将前体溶液涂覆在基板上; 并在涂覆有前体溶液的基材上进行热处理。 可以在前体溶液中使用根据氧化锡半导体的半导体类型具有不同锡价的锡化合物。

公开(公告)号：US20150011044A1

公开(公告)日：2015-01-08

申请号：US14097685

申请日：2013-12-05

Applicant: Industry-Academic Cooperation Foundation, Yonsei University ,  Samsung Display Co., Ltd.

Inventor： Chaun-Gi CHOI ,  Yeon-Gon MO ,  Hyun-Jae KIM ,  Hyun-Soo LIM ,  Si-Joon KIM ,  Tae-Soo JUNG ,  You-Seung RIM

IPC: H01L21/02

CPC classification number: H01L21/02565 ,  H01L21/02628

Abstract: Provided is a composition for forming tin oxide semiconductor including a tin precursor compound, an antimony precursor compound, and a solvent, according to an aspect of the present disclosure. Also provided is a method of forming a tin oxide semiconductor thin film. The method includes preparing a composition including a tin precursor compound and an antimony precursor compound dissolved in a solvent; disposing the composition on a substrate; and performing a heat treatment on the substrate coated with the composition.

Abstract translation: 提供根据本公开的一个方面的用于形成包含锡前体化合物，锑前体化合物和溶剂的氧化锡半导体的组合物。 还提供了形成氧化锡半导体薄膜的方法。 该方法包括制备包含溶解在溶剂中的锡前体化合物和锑前体化合物的组合物; 将组合物置于基材上; 并在涂覆有该组合物的基材上进行热处理。