公开(公告)号：US20220204843A1

公开(公告)日：2022-06-30

申请号：US17546882

申请日：2021-12-09

Applicant: Samsung Display Co., Ltd.

Inventor： Junehyuk Jung ,  Seungwon Park ,  Junghoon Song ,  Baekhee Lee ,  Junwoo Lee ,  Jaebok Chang

IPC: C09K11/88 ,  C09K11/08

Abstract: A quantum dot, a method of preparing the quantum dot, and an optical member and an electronic device, each including the quantum dot, are provided. The quantum dot includes: a core including a Group III-V semiconductor compound alloyed with gallium (Ga); a first shell surrounding the core; and a second shell surrounding the first shell, wherein the first shell includes a first compound that includes a Group II-VI semiconductor compound, a Group III-V semiconductor compound, or a Group III-VI semiconductor compound, the second shell includes a second compound that includes a Group II-VI semiconductor compound, a Group III-V semiconductor compound, or a Group III-VI semiconductor compound, the first compound and the second compound are different from each other, and the atomic percentages of specific elements in a material of the core, elemental ratios in the first shell and second shell with respect to the core satisfy certain ranges.

公开(公告)号：US20230257651A1

公开(公告)日：2023-08-17

申请号：US18165210

申请日：2023-02-06

Applicant: Samsung Display Co., Ltd.

Inventor： Kawon Pak ,  Seungwon Park ,  Seunghee Jang

IPC: C09K11/88 ,  C09K11/08

CPC classification number: C09K11/883 ,  C09K11/0883 ,  B82Y20/00

Abstract: A method of preparing a quantum dot, a quantum dot prepared thereby, and an electronic apparatus including the quantum dot are provided. The method includes: preparing a first solution containing a first element-containing precursor; a preparing a second solution by mixing the first solution with a second element-containing precursor and a third element-containing precursor; and forming a core by heating the second solution. The first element-containing precursor and the second element-containing precursor each independently includes carbon atoms, wherein a number of carbon atoms included in the first element-containing precursor is greater than a number of carbon atoms included in the second element-containing precursor, wherein the first element includes a Group III element other than gallium (Ga), the second element includes Ga, and the third element includes a Group V element.

公开(公告)号：US11725142B2

公开(公告)日：2023-08-15

申请号：US17546882

申请日：2021-12-09

Applicant: Samsung Display Co., Ltd.

Inventor： Junehyuk Jung ,  Seungwon Park ,  Junghoon Song ,  Baekhee Lee ,  Junwoo Lee ,  Jaebok Chang

IPC: C09K11/88 ,  C09K11/08 ,  C09K11/75 ,  C09K11/74 ,  B82Y40/00 ,  B82Y20/00

CPC classification number: C09K11/883 ,  C09K11/0883 ,  C09K11/7492 ,  C09K11/75 ,  B82Y20/00 ,  B82Y40/00

Abstract: A quantum dot, a method of preparing the quantum dot, and an optical member and an electronic device, each including the quantum dot, are provided. The quantum dot includes: a core including a Group III-V semiconductor compound alloyed with gallium (Ga); a first shell surrounding the core; and a second shell surrounding the first shell, wherein the first shell includes a first compound that includes a Group II-VI semiconductor compound, a Group III-V semiconductor compound, or a Group III-VI semiconductor compound, the second shell includes a second compound that includes a Group II-VI semiconductor compound, a Group III-V semiconductor compound, or a Group III-VI semiconductor compound, the first compound and the second compound are different from each other, and the atomic percentages of specific elements in a material of the core, elemental ratios in the first shell and second shell with respect to the core satisfy certain ranges.

公开(公告)号：US20240301287A1

公开(公告)日：2024-09-12

申请号：US18584679

申请日：2024-02-22

Applicant: Samsung Display Co., Ltd.

Inventor： Bitna Yoon ,  Sungjae Kim ,  Youngsik Kim ,  Seungwon Park ,  Donghee Lee ,  Junehyuk Jung

IPC: C09K11/62 ,  B82Y20/00 ,  B82Y40/00 ,  H10K50/115

CPC classification number: C09K11/623 ,  C09K11/621 ,  H10K50/115 ,  B82Y20/00 ,  B82Y40/00

Abstract: A quantum dot having a narrow full width at half maximum, a manufacturing method thereof, and a light-emitting device, an optical member, and an apparatus including the quantum dot are provided.

公开(公告)号：US20230403875A1

公开(公告)日：2023-12-14

申请号：US18106604

申请日：2023-02-07

Applicant: Samsung Display Co., Ltd.

Inventor： Seunghee Jang ,  Kawon Pak ,  Seungwon Park

IPC: H10K50/115 ,  H10K59/38 ,  C09K11/70

CPC classification number: H10K50/115 ,  H10K59/38 ,  C09K11/70 ,  B82Y30/00

Abstract: Embodiments provide a method of preparing a quantum dot, a quantum dot prepared by the method, and an optical member and electronic apparatus that include the quantum dot. The method of preparing the quantum dot includes preparing a first composition which includes a first precursor including a first element, a second precursor including a second element, a third precursor including a third element, a fatty acid, and a solvent; preparing a second composition including a fourth precursor including a fourth element; preparing a first mixture by mixing the first composition with the second composition; and preparing a core by heating the first mixture.

公开(公告)号：US20230329026A1

公开(公告)日：2023-10-12

申请号：US18133383

申请日：2023-04-11

Applicant: Samsung Display Co., Ltd.

Inventor： Seungwon Park ,  Kawon Pak ,  Seunghee Jang ,  Donghee Lee ,  Taekjoon Lee ,  Junehyuk Jung

IPC: H10K50/115 ,  B82Y30/00 ,  B82Y40/00 ,  C09K11/70

CPC classification number: H10K50/115 ,  C09K11/70 ,  B82Y40/00 ,  B82Y30/00

Abstract: An electronic apparatus including the quantum dot, wherein the quantum dot may include a core and a shell covering at least a portion of the core, wherein the core may include indium (In), gallium (Ga), and phosphorus (P), the shell may include a group II-VI semiconductor compound, a group III-V semiconductor compound, a group III-VI semiconductor compound, or a combination thereof, in the core and the shell, the number of moles of Ga relative to the sum of the number of moles of In and the number of moles of Ga (MGa/(MIn+MGa)) may be in a range of about 0.02 to about 0.18, and in the core and the shell, the sum of the number of moles of In and the number of moles of Ga relative to the number of moles of P ((MIn+MGa)/MP) may be in a range of about 1 to about 1.2.

公开(公告)号：US20240318074A1

公开(公告)日：2024-09-26

申请号：US18496793

申请日：2023-10-27

Applicant: Samsung Display Co., Ltd.

Inventor： Youngsik Kim ,  Sungjae Kim ,  Seungwon Park ,  Bitna Yoon ,  Donghee Lee ,  Junehyuk Jung

IPC: C09K11/62 ,  C09K11/58 ,  H10K50/115

CPC classification number: C09K11/621 ,  C09K11/582 ,  H10K50/115

Abstract: A quantum dot including a core represented by Formula 1, a method of manufacturing the quantum dot, and a light-emitting device and an apparatus including the quantum dot are provided:


M1aM2bM3cM4dM5e,  Formula 1



wherein M1 is a Group I metal element, M2 and M3 are each independently a Group III metal element, and M4 and M5 are each independently a Group VI element; and a is 0.05 to 0.60, b is 0 to 1.4, c is 0 to 1.4, d is 0 to 2.0, and e is 0 to 2.0.

公开(公告)号：US20240199950A1

公开(公告)日：2024-06-20

申请号：US18537079

申请日：2023-12-12

Applicant: Samsung Display Co., LTD.

Inventor： Junehyuk Jung ,  Sungjae Kim ,  Youngsik Kim ,  Seungwon Park ,  Bitna Yoon ,  Donghee Lee

IPC: C09K11/62 ,  C09K11/58

CPC classification number: C09K11/623 ,  C09K11/584

Abstract: Provided are a quantum dot, a method of preparing the same, and an electronic apparatus including the same, the quantum dot including a core including copper (Cu), a Group III element, a Group VI element, and gallium (Ga), a first shell covering the core, and a second shell covering the first shell, wherein the first shell includes a Group III-VI compound.

公开(公告)号：US09614015B2

公开(公告)日：2017-04-04

申请号：US14704002

申请日：2015-05-05

Applicant: SAMSUNG DISPLAY CO., LTD.

Inventor： Seungwon Park ,  Baek Hee Lee ,  Manseob Choi ,  Minhyuck Kang ,  Moongyu Lee

IPC: H01L29/18 ,  H01L27/32 ,  H01L51/52 ,  G03F7/004

CPC classification number: H01L27/3246 ,  G03F7/0002 ,  G03F7/004 ,  H01L51/5209 ,  H01L51/5225 ,  H01L51/5268 ,  H01L2227/323

Abstract: A method for fabricating a display device includes forming a thin film transistor on a base substrate, forming a first electrode connected to the thin film transistor, forming a pixel defining layer overlapping a portion of the first electrode, such that the pixel defining layer exposes a portion of the first electrode and partitions pixel areas, forming a block copolymer layer on the first electrode and the pixel defining layer, patterning the block copolymer layer, etching the pixel defining layer by using the patterned block copolymer layer as a mask, such that an uneven pixel defining layer with a plurality of defining layer grooves is formed, and forming a light emitting layer on the first electrode and the uneven pixel defining layer.