Display device
    2.
    发明授权

    公开(公告)号:US10295869B2

    公开(公告)日:2019-05-21

    申请号:US15257293

    申请日:2016-09-06

    Abstract: A display device is provided. The display device includes: a first substrate that comprises a first base substrate, an insulating layer located on the first base substrate, and a barrier layer located on the insulating layer; a second substrate that faces the first substrate; a liquid crystal layer that is located between the first substrate and the second substrate; and a first spacer that is located between the first substrate and the second substrate and is in contact with the first substrate, wherein the first substrate further comprises a second spacer that is located on the barrier layer and overlaps with the first spacer.

    Display device with gate conductive layer forming wire pad in pad area and method of fabricating the same

    公开(公告)号:US11574970B2

    公开(公告)日:2023-02-07

    申请号:US16895756

    申请日:2020-06-08

    Abstract: A display device includes a substrate having a display area and a pad area. A gate conductive layer disposed on the substrate includes a gate conductive metal layer and a gate capping layer. The gate conductive layer forms a gate electrode in the display area and a wire pad in the pad area that is exposed by a pad opening. An interlayer insulating film disposed on the gate conductive layer covers the gate electrode. A data conductive layer disposed on the interlayer insulating film in the display area includes source and drain electrodes. A passivation layer disposed on the data conductive layer covers the source and drain electrodes. A via layer is disposed on the passivation layer. A pixel electrode is disposed on the via layer. The pixel electrode is connected to the source electrode through a contact hole penetrating the via layer and the passivation layer.

    Display device and method of manufacturing the same

    公开(公告)号:US10141348B2

    公开(公告)日:2018-11-27

    申请号:US15413055

    申请日:2017-01-23

    Abstract: Provided are a display device its method of manufacturing. The device includes a base; first and second thin-film transistors (TFT) on the base, adjacent to each; an organic layer covering the first and second TFT, including a first and second opening overlapping the drain electrodes of the first and second TFT, respectively; a common electrode on the organic layer comprising a common electrode opening overlapping the first opening and another common electrode opening overlapping the second opening; an insulating layer on a bump spacer which is on the common electrode; a first and second pixel electrode on the insulating layer overlapping the common electrode and electrically connected to the first and second TFT, respectively, wherein a minimum distance between the bump spacer and the common electrode opening is substantially equal to a minimum distance between the bump spacer and the other common electrode opening.

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