DISPLAY DEVICE AND METHOD FOR MANUFACTURING THE SAME

    公开(公告)号:US20250143025A1

    公开(公告)日:2025-05-01

    申请号:US18740310

    申请日:2024-06-11

    Abstract: Provided are a display device and a method for manufacturing the same. According to one or more embodiments of the present disclosure, the display device includes a substrate, a pixel electrode above the substrate, an organic layer above the pixel electrode, a light-emitting element above the organic layer, and including a contact electrode in contact with the organic layer, and a connection electrode connected to the pixel electrode and to the contact electrode, on a side surface of the organic layer, and on a side surface of the contact electrode.

    DISPLAY DEVICE AND TILED DISPLAY DEVICE INCLUDING THE SAME

    公开(公告)号:US20240387479A1

    公开(公告)日:2024-11-21

    申请号:US18652638

    申请日:2024-05-01

    Abstract: A display device includes: a substrate; a light-emitting element on a first surface of the substrate; a driver on a second surface of the substrate opposite to the first surface, and configured to drive the light-emitting element; a first pad on the first surface of the substrate, and electrically connected to the light-emitting element; a second pad on the second surface of the substrate, and electrically connected to the driver; side surface lines on a side surface of the substrate that is between the first surface and the second surface of the substrate, the side surface lines to electrically connect the first pad to the second pad; and an overcoat layer on the side surface of the substrate, and on the side surface lines, a thickness of a region not overlapping a side surface line is greater than a thickness of a region overlapping the side surface line.

    DISPLAY DEVICE AND METHOD OF MANUFACTURING THE SAME

    公开(公告)号:US20230411561A1

    公开(公告)日:2023-12-21

    申请号:US18118486

    申请日:2023-03-07

    Abstract: A display device includes a first base part, a semiconductor layer including a first semiconductor part disposed on the first base part and a second semiconductor part adjacent to a first side of the first semiconductor part in a first direction, a gate insulating layer disposed on the semiconductor layer and including a first gate insulating layer and a second gate insulating layer spaced apart from each other, and a gate conductive layer including a gate electrode disposed on the first gate insulating layer and overlapping the first semiconductor part and a first connecting electrode overlapping the second gate insulating layer and the second semiconductor part. The first connecting electrode includes a protrusion, the second gate insulating layer includes a recess, and the protrusion of the first connecting electrode overlaps the recess of the second gate insulating layer.

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