DEPOSITION MASK AND METHOD OF FABRICATING THE SAME

    公开(公告)号:US20250101568A1

    公开(公告)日:2025-03-27

    申请号:US18739193

    申请日:2024-06-10

    Abstract: A method of fabricating a deposition mask includes: preparing a silicon on insulator (SOI) substrate including an upper silicon substrate, a lower silicon substrate, and an insulating layer between the upper silicon substrate and the lower silicon substrate; forming a mask membrane having a plurality of openings by patterning the upper silicon substrate; forming a first protective layer on the upper silicon substrate and a second protective layer on the lower silicon substrate; forming a cell opening by patterning the lower silicon substrate; and removing the first protective layer and the second protective layer.

    DISPLAY DEVICE AND METHOD FOR MANUFACTURING THE SAME

    公开(公告)号:US20250048843A1

    公开(公告)日:2025-02-06

    申请号:US18671787

    申请日:2024-05-22

    Abstract: According to an embodiment, a display device may include a semiconductor wafer substrate, a complementary metal oxide semiconductor (CMOS) circuit layer disposed on the semiconductor wafer substrate, and a light emitting element layer disposed on the CMOS circuit layer. The light emitting element layer may include a pixel defining film partitioning a plurality of pixels, a pixel electrode disposed independently in each of the plurality of pixels, an aging wiring disposed between the plurality of pixels, a light emitting layer commonly covering the pixel electrodes of each of the plurality of pixels and the aging wiring, and a common electrode covering the light emitting layer. A portion positioned between the aging wiring and the common electrode of the light emitting layer may include an aged portion in which at least a portion of a conductive layer included in the light emitting layer is aged.

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