公开(公告)号：US20250101568A1

公开(公告)日：2025-03-27

申请号：US18739193

申请日：2024-06-10

Applicant: Samsung Display Co., LTD.

Inventor： Jae Been LEE ,  Mi Yeon CHO ,  Dae Ho SONG ,  Ju Won YOON ,  Yea Hwane CHOI

IPC: C23C14/04 ,  G03F7/00 ,  H10K59/12

Abstract: A method of fabricating a deposition mask includes: preparing a silicon on insulator (SOI) substrate including an upper silicon substrate, a lower silicon substrate, and an insulating layer between the upper silicon substrate and the lower silicon substrate; forming a mask membrane having a plurality of openings by patterning the upper silicon substrate; forming a first protective layer on the upper silicon substrate and a second protective layer on the lower silicon substrate; forming a cell opening by patterning the lower silicon substrate; and removing the first protective layer and the second protective layer.