DEPOSITION MASK, METHOD FOR MANUFACTURING THE SAME, AND DISPLAY DEVICE MANUFACTURED USING THE SAME

    公开(公告)号:US20240407245A1

    公开(公告)日:2024-12-05

    申请号:US18418645

    申请日:2024-01-22

    Abstract: A deposition mask, method for manufacturing the same, and display device manufactured using the same. The deposition mask includes a mask substrate including an opening, and a mask pattern disposed on the mask substrate and including multiple hole patterns spaced apart from each other, wherein the mask pattern includes a first portion on the mask substrate, and a second portion protruding from the first portion in a direction opposite to the mask substrate, the second portion includes a first protruding portion and a second protruding portion disposed to be adjacent to the hole patterns, and a recessed portion disposed between the first protruding portion and the second protruding portion, and a height of the recessed portion may be smaller than heights of the first protruding portion and the second protruding portion.

    DEPOSITION MASK AND METHOD OF FABRICATING THE SAME

    公开(公告)号:US20250101626A1

    公开(公告)日:2025-03-27

    申请号:US18680397

    申请日:2024-05-31

    Abstract: A method of fabricating a deposition mask includes forming a wrinkle pattern in a mask rib region and including grooves by partially etching a front surface of a silicon substrate, forming a first photoresist pattern including first openings on a front surface of the silicon substrate in each of cell areas, growing a first plating film covering the grooves of the wrinkle pattern and a second plating film covering first openings of the first photoresist pattern, removing the first photoresist pattern, forming a second photoresist pattern in outer frame areas on a rear surface of the silicon substrate, and exposing a rear surface of metal mask ribs formed with the first plating film and a rear surface of a mask membrane formed with the second plating film by partially etching the rear surface of the silicon substrate using the second photoresist pattern.

    METHOD FOR MANUFACTURING DEPOSITION MASK

    公开(公告)号:US20250075305A1

    公开(公告)日:2025-03-06

    申请号:US18642578

    申请日:2024-04-22

    Abstract: A method for manufacturing a deposition mask includes depositing a seed metal layer on a front surface of a silicon substrate, forming a first photoresist pattern defining first openings on the seed metal layer, growing a plating layer in the first openings of the first photoresist pattern, forming a mask membrane by removing the first photoresist pattern and leaving the plating layer, depositing a protection layer to cover a front surface of the mask membrane, forming a second photoresist pattern defining cell opening corresponding to unit masks, respectively, on a back surface of the silicon substrate, exposing the seed metal layer by etching the back surface of the silicon substrate using the second photoresist pattern as a mask, exposing a back surface of the mask membrane by etching the seed metal layer using the second photoresist pattern as a mask, and removing the protection layer.

    DEPOSITION MASK AND METHOD OF FABRICATING THE SAME

    公开(公告)号:US20250101567A1

    公开(公告)日:2025-03-27

    申请号:US18734300

    申请日:2024-06-05

    Abstract: A method of fabricating a mask includes defining cell areas and a mask frame area on a silicon substrate, the mask frame area excluding the cell areas, the mask frame area may include a mask rib region partitioning the cell areas and an outer frame region disposed at an outermost position of the silicon substrate, forming a groove in the mask rib region, forming a metal mask rib by forming a metal in the groove, forming a photoresist pattern including openings in each of the cell areas, growing a plating film in each of the cell areas, forming a mask membrane formed of the plating film by removing the photoresist pattern, and etching a rear surface of the silicon substrate to form cell openings associated with the cell areas, respectively.

Patent Agency Ranking