公开(公告)号：US11355064B2

公开(公告)日：2022-06-07

申请号：US17265332

申请日：2019-06-28

Applicant: SAMSUNG DISPLAY CO., LTD.

Inventor： Joo-Hee Jeon ,  Gun-Hee Kim ,  Ju-Won Yoon ,  Seung-Chan Lee ,  Sang-Ho Park ,  Joo-Sun Yoon

IPC: G09G3/3233

Abstract: A pixel circuit includes an OLED, a first transistor including a gate electrode connected to a first node and an electrode connected to a third node, a capacitor including a first electrode for receiving a power supply voltage and a second electrode connected to the first node, a third transistor including a gate electrode for receiving a first gate signal, a first electrode connected to the first node, and a second electrode connected to the third node, a fourth transistor including a gate electrode for receiving a second gate signal, a first electrode connected to the first node, and a second electrode and a second gate electrode for receiving a first initialization voltage, and a seventh transistor including a gate electrode for receiving a third gate signal, a first electrode for receiving a second initialization voltage, and a second electrode connected to an anode electrode of the OLED.

公开(公告)号：US09070597B2

公开(公告)日：2015-06-30

申请号：US14262769

申请日：2014-04-27

Applicant: Samsung Display Co., Ltd. ,  Kobe Steel, LTD.

Inventor： Byung-Du Ahn ,  Gun-Hee Kim ,  Jun-Hyung Lim ,  Toshihiro Kugimiya ,  Hiroshi Goto ,  Aya Miki ,  Shinya Morita

IPC: H01L29/00 ,  H01L27/12 ,  H01L29/786 ,  H01L29/66

CPC classification number: H01L27/1225 ,  H01L29/66969 ,  H01L29/78633 ,  H01L29/78693

Abstract: A thin film transistor includes a gate electrode, a channel overlapped with the gate electrode, a source electrode contacting the channel, and a drain electrode spaced apart from the source electrode and contacting the channel. The channel includes indium-zinc-tin oxide sourced from a source including a single phase indium-zinc-tin oxide.

Abstract translation: 薄膜晶体管包括栅电极，与栅电极重叠的沟道，与沟道接触的源电极以及与源电极间隔开并与沟道接触的漏电极。 该通道包括源自包括单相铟 - 锌 - 锡氧化物的源的铟 - 锌 - 锡氧化物。

公开(公告)号：US09093536B2

公开(公告)日：2015-07-28

申请号：US13914821

申请日：2013-06-11

Applicant: Samsung Display Co., LTD.

Inventor： Gun-Hee Kim ,  Sei-Yong Park ,  Woo-Ho Jeong ,  Jin-Hyun Park ,  Jee-Hun Lim

IPC: H01L29/10 ,  H01L29/786 ,  H01L29/66 ,  H01L29/423

CPC classification number: H01L29/786 ,  H01L29/42384 ,  H01L29/66742 ,  H01L29/66969 ,  H01L29/78606 ,  H01L29/78648 ,  H01L29/7869 ,  H01L29/78696

Abstract: A thin film transistor substrate includes a substrate, a gate electrode disposed on the substrate, a gate insulation layer disposed on the gate electrode, an oxide semiconductor pattern disposed on the gate insulation layer, where the oxide semiconductor pattern includes a first area whose carrier concentration is in a range of about 1017 per cubic centimeter to about 1019 per cubic centimeter and a second area whose carrier concentration is less than the carrier concentration of the first area, an etch stopper disposed on the oxide semiconductor pattern, where the etch stopper covers the first area and the second area of the oxide semiconductor pattern, a signal electrode partially overlapping the etch stopper and the second area, and a passivation layer which covers the etch stopper and the signal electrode.

Abstract translation: 薄膜晶体管基板包括基板，设置在基板上的栅极电极，设置在栅电极上的栅极绝缘层，设置在栅极绝缘层上的氧化物半导体图案，其中氧化物半导体图案包括第一区域，其载流子浓度 在约1017每立方厘米至约1019每立方厘米的范围内，第二区域的载流子浓度小于第一区域的载流子浓度，蚀刻停止器设置在氧化物半导体图案上，其中蚀刻停止器覆盖 氧化物半导体图案的第一区域和第二区域，与蚀刻停止器和第二区域部分重叠的信号电极，以及覆盖蚀刻停止器和信号电极的钝化层。

公开(公告)号：US11386854B2

公开(公告)日：2022-07-12

申请号：US17266846

申请日：2019-06-25

Applicant: Samsung Display Co., Ltd.

Inventor： Gun-Hee Kim ,  Sang-Ho Park ,  Ju-Won Yoon ,  Seung-Chan Lee ,  Joo-Hee Jeon

IPC: G09G3/3291 ,  H01L27/32

Abstract: A pixel circuit includes: a driving switching element; a data initializer to initialize a voltage of a control electrode of the driving switching element; a data writer to write a data voltage to the driving switching element; an organic light emitting element; an organic light emitting element initializer to initialize an anode electrode of the organic light emitting element to a second initialization voltage based on an organic light emitting element initialization gate signal; and a light emitting controller to control an emission of the organic light emitting element. The organic light emitting element initializer includes: a control electrode to receive the organic light emitting element initialization gate signal; an input electrode to receive the second initialization voltage; an output electrode connected to the anode electrode; and a conductive layer to receive a compensation control signal that is different from the organic light emitting element initialization gate signal.