ATOMIC LAYER DEPOSITION APPARATUS AND ATOMIC LAYER DEPOSITION METHOD USING THE SAME

    公开(公告)号:US20230265558A1

    公开(公告)日:2023-08-24

    申请号:US17993147

    申请日:2022-11-23

    CPC classification number: C23C16/45504 C23C16/45544

    Abstract: An atomic layer deposition apparatus includes a substrate support which supports a substrate; a process module on the substrate support; a first gas pipe which supplies a first gas to the process module; a second gas pipe which supplies a second gas to the process module; and an exhaust part which discharges the first and second gases supplied to the process module. The process module includes: a first gas supply flow path portion connected to the first gas pipe; a second gas supply flow path portion under the first gas supply flow path portion and connected to the second gas pipe; and a gas exhaust flow path portion connected to the exhaust part. The gas exhaust flow path is spaced apart from the first and second gas supply flow path portions with the substrate therebetween, and the first and second gases pass through a process area in a laminar flow.

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