公开(公告)号：US09269729B2

公开(公告)日：2016-02-23

申请号：US14727286

申请日：2015-06-01

Applicant: SAMSUNG DISPLAY CO., LTD.

Inventor： Kwang-Ho Lee ,  Jang-Soo Kim ,  Hong-Suk Yoo ,  Sang-Soo Kim ,  Shi-Yul Kim ,  Jae-Hyoung Youn

IPC: H01L27/12 ,  G02F1/1362 ,  G02F1/1339

CPC classification number: H01L27/124 ,  G02F1/13394 ,  G02F1/136209 ,  G02F1/136227 ,  G02F2001/136222 ,  H01L27/1248 ,  H01L27/1262

Abstract: A thin film transistor (“TFT”) array panel includes; an insulation substrate, a TFT disposed on the insulation substrate and including a drain electrode, a passivation layer covering the TFT and including a contact portion disposed therein corresponding to the drain electrode, a partition comprising an organic material disposed on the passivation layer, and including a transverse portion, a longitudinal portion, and a contact portion disposed on the drain electrode, a color filter disposed on the passivation layer and disposed in a region defined by the partition, an organic capping layer disposed on the partition and the color filter, and a pixel electrode disposed on the organic capping layer, and connected to the drain electrode through the contact portion of the passivation layer and the contact portion of the partition, wherein a contact hole is formed in the organic capping layer corresponding to the contact portion of the passivation layer.

公开(公告)号：US08563368B2

公开(公告)日：2013-10-22

申请号：US13758716

申请日：2013-02-04

Applicant: Samsung Display Co., Ltd

Inventor： Young-Wook Lee ,  Hong-Suk Yoo ,  Jean-Ho Song ,  Jae-Hyoung Youn ,  Woo-Geun Lee ,  Ki-Won Kim ,  Jong-In Kim

IPC: H01L21/00

CPC classification number: H01L29/66742 ,  H01L27/1225 ,  H01L27/124 ,  H01L27/1248

Abstract: A thin film transistor substrate according to an embodiment of the present invention includes: an insulation substrate; a gate line formed on the insulation substrate; a first interlayer insulating layer formed on the gate line; a data line and a gate electrode formed on the first interlayer insulating layer; a gate insulating layer formed on the data line and gate electrode; a semiconductor formed on the gate insulating layer and overlapping the gate electrode; a second interlayer insulating layer formed on the semiconductor; a first connection formed on the second interlayer insulating layer and electrically connecting the gate line and the gate electrode to each other; a drain electrode connected to the semiconductor; a pixel electrode connected to the drain electrode; and a second connection connecting the data line and the semiconductor to each other.

公开(公告)号：US09570477B2

公开(公告)日：2017-02-14

申请号：US15041746

申请日：2016-02-11

Applicant: SAMSUNG DISPLAY CO., LTD.

Inventor： Kwang-Ho Lee ,  Jang-Soo Kim ,  Hong-Suk Yoo ,  Sang-Soo Kim ,  Shi-Yul Kim ,  Jae-Hyoung Youn

IPC: H01L33/00 ,  H01L21/28 ,  H01L27/12 ,  G02F1/1362 ,  G02F1/1339

CPC classification number: H01L27/124 ,  G02F1/13394 ,  G02F1/136209 ,  G02F1/136227 ,  G02F2001/136222 ,  H01L27/1248 ,  H01L27/1262

Abstract: A thin film transistor (“TFT”) array panel includes; an insulation substrate, a TFT disposed on the insulation substrate and including a drain electrode, a passivation layer covering the TFT and including a contact portion disposed therein corresponding to the drain electrode, a partition comprising an organic material disposed on the passivation layer, and including a transverse portion, a longitudinal portion, and a contact portion disposed on the drain electrode, a color filter disposed on the passivation layer and disposed in a region defined by the partition, an organic capping layer disposed on the partition and the color filter, and a pixel electrode disposed on the organic capping layer, and connected to the drain electrode through the contact portion of the passivation layer and the contact portion of the partition, wherein a contact hole is formed in the organic capping layer corresponding to the contact portion of the passivation layer.

Abstract translation: 薄膜晶体管（“TFT”）阵列面板包括： 绝缘基板，设置在所述绝缘基板上并包括漏电极的TFT，覆盖所述TFT的钝化层，并且包括设置在其中的所述漏电极对应的接触部分，所述隔板包括设置在所述钝化层上的有机材料，并且包括 横向部分，纵向部分和设置在漏电极上的接触部分，设置在钝化层上并设置在由隔板限定的区域中的滤色器，设置在隔板上的有机覆盖层和滤色器，以及 设置在所述有机覆盖层上的像素电极，并且通过所述钝化层的接触部分和所述隔离物的接触部分连接到所述漏电极，其中在所述有机覆盖层中形成接触孔，所述接触孔对应于所述钝化层的接触部分 钝化层。

公开(公告)号：US08879031B2

公开(公告)日：2014-11-04

申请号：US14046396

申请日：2013-10-04

Applicant: Samsung Display Co, Ltd.

Inventor： Kyung-Sook Jeon ,  Jang-Soo Kim ,  Hong-Suk Yoo ,  Yong-Hwan Kim ,  Hwa-Yeul Oh ,  Jong-In Kim ,  Sang-Hee Jang

IPC: G02F1/1333 ,  G02F1/1339 ,  G02F1/1335

CPC classification number: G02F1/133514 ,  G02F1/133516 ,  G02F1/13394 ,  G02F2001/133388

Abstract: Exemplary embodiments of the present invention disclose a liquid crystal display (LCD) and a method of manufacturing the same. The LCD may have a display area and a peripheral area. An organic layer of the peripheral area may be patterned using a half-tone mask, and a protrusion member may be formed in the peripheral area. Accordingly, the thin film transistor array panel and the corresponding substrate may be prevented from being temporary adhered in the peripheral area such that the density of the liquid crystal molecules filled in the peripheral area may be uniformly maintained and the display quality of the liquid crystal display may be improved.

Abstract translation: 本发明的示例性实施例公开了液晶显示器（LCD）及其制造方法。 LCD可以具有显示区域和外围区域。 可以使用半色调掩模对周边区域的有机层进行图案化，并且可以在周边区域中形成突起构件。 因此，可以防止薄膜晶体管阵列面板和对应的基板临时粘附在周边区域中，使得可以均匀地保持填充在周边区域中的液晶分子的密度，并且液晶显示器的显示质量 可以改进。