公开(公告)号：US20240030294A1

公开(公告)日：2024-01-25

申请号：US18321275

申请日：2023-05-22

Applicant: Samsung Electronics Co., Ltd.

Inventor： Minsu SEOL ,  Junyoung KWON ,  Jitak NAM ,  Minseok Yoo

IPC: H01L29/18 ,  H01L29/16 ,  H01L29/417 ,  H01L21/02

CPC classification number: H01L29/18 ,  H01L29/1606 ,  H01L29/41725 ,  H01L21/02568 ,  H01L21/02485

Abstract: A semiconductor device may include at least one first two-dimensional material layer; a source electrode and a drain electrode that are respectively on both sides of the at least one first two-dimensional material layer; second two-dimensional material layers respectively on a side of the source electrode and a side of the drain electrode and connected to the at least one first two-dimensional material layer; a gate insulating layer surrounding the at least one first two-dimensional material layer; and a gate electrode on the gate insulating layer.