摘要:
An improved dual slope integrating analog-to-digital converter for use in a Digital Multi-Meter includes an input portion, an A/D core portion, and a digital portion. The A/D core portion includes an auto zero function capability for automatically compensating for any existing offset voltages in various measurement modes such as voltage, resistance, or current measurement modes. The improved A/D converter of the present invention operates at high speed and with high resolution.
摘要翻译:一种用于数字多表的集成模数转换器的改进的双斜率包括输入部分,A / D核心部分和数字部分。 A / D核心部分包括用于自动补偿各种测量模式(例如电压,电阻或电流测量模式)中的任何现有偏移电压的自动调零功能。 本发明的改进的A / D转换器以高速和高分辨率工作。
摘要:
A plasma display apparatus includes: an electrode of a discharge cell; a first transistor having a first terminal and a second terminal, the second terminal being connected to the electrode; a first capacitor having a first terminal to receive a control signal having either a low level voltage or a high level voltage; a push-pull circuit including a first power terminal, a second power terminal connected to the first terminal of the first transistor, an input terminal connected to a second terminal of the first capacitor, and an output terminal connected to a gate of the first transistor, the push-pull circuit outputting either a voltage of the first power terminal or a voltage of the second power terminal to the output terminal; a floating power source having a positive terminal connected to the first power terminal and a negative terminal connected to the second power terminal; and a first diode connected between the first terminal of the first transistor and the second terminal of the first capacitor.
摘要:
A protective layer of a plasma display panel includes smoky magnesium oxide, the smoky magnesium oxide having single crystal magnesium oxide with a plurality of cavities therein.
摘要:
A method for fabricating a semiconductor device includes forming an inter-layer insulation layer on a substrate; forming openings in the inter-layer insulation layer; forming a metal barrier layer in the openings and on the inter-layer insulation layer; forming a first conductive layer on the metal barrier layer and filled in the openings; etching the first conductive layer to form interconnection layers in the openings and to expose portions of the metal barrier layer, the interconnection layers being inside the openings and at a depth from a top of the openings; etching the exposed portions of the metal barrier layer to obtain a sloped profile of the metal barrier layer at top lateral portions of the openings; forming a second conductive layer over the inter-layer insulation layer, the interconnection layers and the metal barrier layer with the sloped profile; and patterning the second conductive layer to form metal lines.
摘要:
In a plasma display, a first electrode and a second electrode of a transistor may be respectively coupled to a scan electrode and a power source for supplying a scan voltage. The plasma display may include a scan electrode, a first transistor, a first resistor, and a second resistor. The first transistor may include a first electrode electrically coupled to the scan electrode, a second electrode electrically coupled to the power source and a control electrode. The first resistor may be electrically coupled between the scan electrode and the control electrode of the first transistor. The second resistor may be electrically coupled between the control electrode of the transistor and the power source.
摘要:
A protecting layer is formed of a magnesium oxide and at least one additional component selected from the group consisting of a copper component selected from copper and a copper oxide, a nickel component selected from nickel and a nickel oxide, a cobalt component selected from cobalt and a cobalt oxide, and an iron component selected from iron and an iron oxide; a composite for forming the protecting layer; a method of forming the protecting layer; and a plasma display panel including the protecting layer. The protecting layer, which is used in a PDP, protects an electrode and a dielectric layer from a plasma ion generated by a gaseous mixture of Ne and Xe, or He, Ne, and Xe, and discharge delay time and dependency of the discharge delay time on temperature can be decreased and sputtering resistance can be increased.
摘要:
A plasma display device and method of driving the device is disclosed. The device includes a driving circuit for driving reset, address, and sustain periods during a subfield of a frame. The driving circuit includes a single switch which is used to drive a display electrode both during the reset period and during the sustain period. The switch being used for both periods removes the need for a second switch, thereby reducing manufacturing and design costs.
摘要:
A plasma display is disclosed. In the plasma display, a first transistor for applying a low level voltage of a sustain pulse is connected to a high voltage terminal of a scanning circuit and a second transistor for applying a high level voltage of the sustain pulse is connected to a low voltage terminal of the scanning circuit. The first and the second transistors are alternatively turned on during sustain period, and the sustain pulse is applied to the scan electrode.
摘要:
A plasma display device including a plasma display panel (PDP), a temperature detector for detecting temperature of the PDP, a driver for applying a driving voltage to a scan electrode, and a controller for generating a control signal to control the driver according to the temperature. The driver includes a transistor and first and second resistors. The transistor is coupled between a first power source and the scan electrode. The first power source supplies a scan voltage to the scan electrode. At least one of the first resistor and the second resistor is a variable resistor having a resistance that varies according to the control signal of the controller. A low discharge due to high temperature can be reduced or prevented, and the number of power sources of the plasma display device can be reduced.
摘要:
A method for fabricating a semiconductor device includes forming an inter-layer insulation layer on a substrate; forming openings in the inter-layer insulation layer; forming a metal barrier layer in the openings and on the inter-layer insulation layer; forming a first conductive layer on the metal barrier layer and filled in the openings; etching the first conductive layer to form interconnection layers in the openings and to expose portions of the metal barrier layer, the interconnection layers being inside the openings and at a depth from a top of the openings; etching the exposed portions of the metal barrier layer to obtain a sloped profile of the metal barrier layer at top lateral portions of the openings; forming a second conductive layer over the inter-layer insulation layer, the interconnection layers and the metal barrier layer with the sloped profile; and patterning the second conductive layer to form metal lines.