Thin Film Silicon Nitride Barrier Layers On Flexible Substrate
    1.
    发明申请
    Thin Film Silicon Nitride Barrier Layers On Flexible Substrate 审中-公开
    薄膜氮化硅阻挡层在柔性基板上

    公开(公告)号:US20140183498A1

    公开(公告)日:2014-07-03

    申请号:US14136951

    申请日:2013-12-20

    Abstract: An article comprising a polymeric substrate and at least one inorganic barrier layer, wherein the inorganic barrier layer has a stress not greater than about 400 MPa and a density of at least about 1.5 g/cm3. The article is preferably an optical device, such as an organic light emitting diode (OLED) or a photovoltaic (PV) module, wherein a silicon nitride barrier layer has been directly deposited on a flexible polymeric substrate via plasma enhanced chemical vapor deposition (PECVD).

    Abstract translation: 一种包含聚合物基材和至少一种无机阻挡层的制品,其中所述无机阻挡层具有不大于约400MPa的应力和至少约1.5g / cm 3的密度。 该物品优选是诸如有机发光二极管(OLED)或光伏(PV)模块的光学器件,其中通过等离子体增强化学气相沉积(PECVD)将氮化硅阻挡层直接沉积在柔性聚合物基底上, 。

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