公开(公告)号：US20240278381A1

公开(公告)日：2024-08-22

申请号：US18570231

申请日：2022-04-21

申请人： SUMCO CORPORATION

发明人： Ryoya TERAKAWA ,  Hiroki OTA

IPC分类号： B24B37/20 ,  B24B37/04 ,  H01L21/02

CPC分类号： B24B37/20 ,  B24B37/042 ,  H01L21/02024

摘要： A polishing head having a first annular member, a closing member, a membrane, and a second annular member situated under the membrane and having an opening which holds a work to be polished. A space, which is formed by closing the opening of the first annular member with the closing member and the membrane, is partitioned into an inside space and an outside space with an annular partition wall having a top annular connection part connected to the closing member and a bottom annular connection part connected to the membrane, the inside diameter of the bottom annular connection part of the annular partition wall is larger than the inside diameter of the second annular member, and the outer circumferential region of the setting position of the work to be polished is situated vertically under the top annular connection part of the annular partition wall.

公开(公告)号：US20240025008A1

公开(公告)日：2024-01-25

申请号：US18257492

申请日：2021-08-25

申请人： SUMCO CORPORATION

发明人： Masahiro MURAKAMI ,  Ryoya TERAKAWA

IPC分类号： B24B37/04 ,  B24B53/017

CPC分类号： B24B37/042 ,  B24B53/017

摘要： A method of polishing a silicon wafer, including a final polishing step including a pre-stage polishing step and a subsequent finish polishing step. The finish polishing step in the final polishing step includes a finish slurry polishing step using a polishing solution having an abrasive grain density of 1×1013/cm3 or more as the second polishing solution; and a pre-polishing step using a polishing solution having an abrasive grain density of 1×1010/cm3 or less as the second polishing solution, the pre-polishing step being performed prior to the finish slurry polishing step. A method of producing a silicon wafer, including the steps of: forming a notch portion on a periphery of a single crystal silicon ingot grown by the Czochralski process; slicing the ingot to obtain a silicon wafer; and subjecting the resulting silicon wafer to the above method of polishing a silicon wafer.

公开(公告)号：US20220161388A1

公开(公告)日：2022-05-26

申请号：US17600189

申请日：2019-12-27

申请人： SUMCO CORPORATION

发明人： Yuki NAKANO ,  Ryoya TERAKAWA ,  Takayuki KIHARA ,  Hiroki OTA

IPC分类号： B24B37/32 ,  H01L21/306 ,  B24B37/10

摘要： A polishing head includes a first ring-shaped member having an opening; a plate-shaped member that closes the opening on an upper side of the first ring-shaped member; a membrane that closes the opening on a lower side of the first ring-shaped member; a back pad adhered to a lower surface of the membrane; and a second ring-shaped member located below the back pad and having an opening that holds a polishing target workpiece. A space formed by closing the opening of the first ring-shaped member by the plate-shaped member and the membrane includes: a central region; and an outer peripheral region partitioned from the central region by a partition, and an inner peripheral edge region of the second ring-shaped member is located vertically below an outer peripheral edge of the outer peripheral region. A polishing apparatus includes the polishing head, and is used in a method of manufacturing a semiconductor wafer.

公开(公告)号：US20210331285A1

公开(公告)日：2021-10-28

申请号：US17055735

申请日：2019-02-13

申请人： SUMCO CORPORATION

发明人： Yuki NAKANO ,  Katsuhisa SUGIMORI ,  Kazuaki KOZASA ,  Jiro KAJIWARA ,  Katsutoshi YAMAMOTO ,  Takayuki KIHARA ,  Ryoya TERAKAWA

IPC分类号： B24B37/32 ,  B24B7/22 ,  B24B57/02 ,  B24B37/10

摘要： A polishing head of a wafer polishing apparatus is provided with: a membrane head that can independently control a center control pressure pressing a center portion of a wafer, and an outer periphery control pressure pressing an outer peripheral portion of the wafer; an outer ring integrated with the membrane head so as to configure the outer peripheral portion of the membrane head; and a contact type retainer ring provided outside the membrane head. The membrane head has a central pressure chamber of a single compartment structure that controls the center control pressure, and an outer peripheral pressure chamber that is provided above the central pressure chamber, and that controls the outer periphery control pressure. A position of a lower end of the outer ring reaches at least a position of an inner bottom surface of the central pressure chamber.

公开(公告)号：US20180311783A1

公开(公告)日：2018-11-01

申请号：US15770602

申请日：2016-10-12

申请人： SUMCO CORPORATION

发明人： Ryoya TERAKAWA ,  Ryuichi TANIMOTO ,  Hironori KANEKO

IPC分类号： B24B37/30 ,  B32B3/08 ,  H01L21/67

摘要： A wafer polishing apparatus is provided with a rotating platen to which a polishing pad is affixed and a polishing head that holds a wafer placed on the polishing pad while pressing the wafer. The polishing head has a membrane that contacts the upper surface of the wafer and applying a pressing force thereto and a support plate that supports the membrane. The membrane has a main surface part facing the bottom surface of the support plate and a side surface part facing the outer peripheral edge surface of the support plate. The vertical tension due to the side surface part of the membrane is larger than the lateral tension due to the main surface part of the membrane.

公开(公告)号：US20240198479A1

公开(公告)日：2024-06-20

申请号：US18545306

申请日：2023-12-19

申请人： SUMCO CORPORATION

发明人： Hiroki OTA ,  Ryoya TERAKAWA

IPC分类号： B24B37/30 ,  B24B37/04

CPC分类号： B24B37/30 ,  B24B37/04

摘要： The polishing head has, with the direction toward the center of the opening of the first annular member assumed as the inside, and with the other direction assumed as the outside, the space, formed by closing the opening of the first annular member by the closing member and the membrane, and partitioned into an inside space and an outside space by an annular partition wall with a top annular connection part connected to the closing member and with a bottom annular connection part connected to the membrane, the inside diameter of the bottom annular connection part of the annular partition wall is larger than the inside diameter of the second annular member, and the radius of the top annular connection part of the annular partition wall is 33% or more and 90% or less with the radius of the setting position of the work to be polished assumed as 100%.

公开(公告)号：US20230033545A1

公开(公告)日：2023-02-02

申请号：US17788834

申请日：2020-10-13

申请人： SUMCO CORPORATION

发明人： Ryoya TERAKAWA

IPC分类号： B24B37/34 ,  B24B37/32 ,  H01L21/306 ,  H01L21/02

摘要： Provided is a method of transferring a semiconductor wafer to a single-side polishing apparatus without forming scratches on the surface of the semiconductor wafer. The method includes: starting to splay the liquid from each spray hole; placing the semiconductor wafer on the retainer portion to hold a surface of the semiconductor wafer by suction without contact, and raising the tray to attach the semiconductor wafer to the polishing head, wherein a period of time from a point at which the semiconductor wafer is held by the retainer portion to a point at which the attaching of the semiconductor wafer W to the polishing head is completed is 5 s or more, or wherein a ratio of a total area of the protrusions to an area of the semiconductor wafer is 15% or more.

公开(公告)号：US20200258735A1

公开(公告)日：2020-08-13

申请号：US15774470

申请日：2016-11-04

申请人： SUMCO CORPORATION

发明人： Takashi NISHITANI ,  Ryuichi TANIMOTO ,  Ryoya TERAKAWA

IPC分类号： H01L21/02 ,  B24B37/08

摘要： A wafer polishing method according to the present invention is provided with: a first polishing step (step S1) of polishing a wafer using a polishing head of an independent pressurizing system having a retainer ring capable of performing pressing operation independently of a wafer pressurizing mechanism; and a second polishing step (step S3) of polishing the wafer that has been polished in the first polishing step using a polishing head of a fixed pressurizing system having a retainer ring fixed to the wafer pressurizing mechanism.

公开(公告)号：US20180369985A1

公开(公告)日：2018-12-27

申请号：US16062433

申请日：2016-11-04

申请人： SUMCO CORPORATION

发明人： Tomonori KAWASAKI ,  Ryoya TERAKAWA

IPC分类号： B24B37/10 ,  B24B37/015 ,  B24B37/20

摘要： A wafer polishing method of polishing one surface of a wafer by rotating a rotating platen to which a polishing pad is affixed and a pressurizing head while supplying slurry onto the rotating platen and pressurizing/holding the wafer on the polishing pad with the pressurizing head, the method including: calculating an F/T value by monitoring a load current value F of a motor for rotating the rotating platen and a surface temperature T of the polishing pad during the wafer polishing; and controlling at least one of the rotation speed of the rotating platen and the polishing pressure of the pressurizing head based on the calculated F/T value.