公开(公告)号：US20240025008A1

公开(公告)日：2024-01-25

申请号：US18257492

申请日：2021-08-25

申请人： SUMCO CORPORATION

发明人： Masahiro MURAKAMI ,  Ryoya TERAKAWA

IPC分类号： B24B37/04 ,  B24B53/017

CPC分类号： B24B37/042 ,  B24B53/017

摘要： A method of polishing a silicon wafer, including a final polishing step including a pre-stage polishing step and a subsequent finish polishing step. The finish polishing step in the final polishing step includes a finish slurry polishing step using a polishing solution having an abrasive grain density of 1×1013/cm3 or more as the second polishing solution; and a pre-polishing step using a polishing solution having an abrasive grain density of 1×1010/cm3 or less as the second polishing solution, the pre-polishing step being performed prior to the finish slurry polishing step. A method of producing a silicon wafer, including the steps of: forming a notch portion on a periphery of a single crystal silicon ingot grown by the Czochralski process; slicing the ingot to obtain a silicon wafer; and subjecting the resulting silicon wafer to the above method of polishing a silicon wafer.

公开(公告)号：US20220102225A1

公开(公告)日：2022-03-31

申请号：US17417853

申请日：2019-11-11

申请人： SUMCO CORPORATION

发明人： Takahiro NAGASAWA ,  Masahiro MURAKAMI

IPC分类号： H01L21/66 ,  H01L21/02 ,  G01N21/956

摘要： Provided is an evaluation method of a semiconductor wafer having a polished surface, the method including a cleaning process of cleaning the semiconductor wafer with one or more kinds of cleaning liquid, measuring an LPD of the polished surface both before and after the cleaning process with a laser surface inspection device, and distinguishing the type of defect or foreign substance measured as the LPD, based on measurement results obtained in the measuring, according to distinguishing standards shown in Table A. TABLE A Type of Defect or Measurement Result
Foreign Substance LPD where a detection size
PID X before the cleaning process and a detection size Y after the cleaning process fulfill the relationship X