公开(公告)号：US20250022894A1

公开(公告)日：2025-01-16

申请号：US18761207

申请日：2024-07-01

Applicant: STMicroelectronics International N.V.

Inventor： Giulio FORCOLIN ,  Raul Andres BIANCHI ,  Isobel NICHOLSON

IPC: H01L27/146 ,  H01L31/107 ,  H01L31/18

Abstract: A pixel includes, on a first face, first trenches extending parallel to a first direction and regularly spaced in a second direction (orthogonal to the first direction) and second trenches extending parallel to the second direction and regularly spaced in the first direction. The first trenches include first notches, each first notch extending from a first trench and being aligned with a corresponding second trench. The second trenches include second notches, each second notch extending from a second trench and being aligned with a corresponding first trench.

公开(公告)号：US20240334087A1

公开(公告)日：2024-10-03

申请号：US18613987

申请日：2024-03-22

Applicant: STMicroelectronics International N.V.

Inventor： Raffaele BIANCHINI ,  Raul Andres BIANCHI ,  Mohammed AL-RAWHANI

IPC: H04N25/773 ,  H01L27/146 ,  H01L31/02 ,  H01L31/107 ,  H04N25/443 ,  H04N25/709

CPC classification number: H04N25/773 ,  H01L27/14612 ,  H01L31/02027 ,  H04N25/443 ,  H04N25/709 ,  H01L31/107

Abstract: The present disclosure relates to an avalanche photodiode pixel including: a transistor adapted to be controlled by an enable signal having a first state for controlling the enabling of the pixel and a second state for controlling the disabling of the pixel, the transistor being configured to couple an avalanche photodiode of the pixel to a node of application of a substrate voltage when the enable signal is in the first state; and an output circuit adapted to be controlled by the enable signal and configured to provide a pixel output signal when the enable signal is in the first state and to block the pixel output signal when the enable signal is in the second state.

公开(公告)号：US20240393439A1

公开(公告)日：2024-11-28

申请号：US18671527

申请日：2024-05-22

Applicant: STMicroelectronics International N.V.

Inventor： Raul Andres BIANCHI ,  Christel Marie-Noëlle BUJ

IPC: G01S7/481 ,  G01S17/894 ,  H01L27/146

Abstract: The present disclosure relates to a process to control an optoelectronic device comprising a single-photon avalanche diode n a substrate, wherein the diode comprises a first region doped with a first type of conductivity level with a first face of the substrate and a second region doped with a second type of conductivity extending from the first face to a second face of the substrate opposed to the first face, wherein the device comprises a third conducting or semiconducting region at the second face, wherein the process comprises the application of a biasing voltage to the third region in order to generate an electric field that accelerates the charges generated in the diode.