公开(公告)号：US20240393439A1

公开(公告)日：2024-11-28

申请号：US18671527

申请日：2024-05-22

Applicant: STMicroelectronics International N.V.

Inventor： Raul Andres BIANCHI ,  Christel Marie-Noëlle BUJ

IPC: G01S7/481 ,  G01S17/894 ,  H01L27/146

Abstract: The present disclosure relates to a process to control an optoelectronic device comprising a single-photon avalanche diode n a substrate, wherein the diode comprises a first region doped with a first type of conductivity level with a first face of the substrate and a second region doped with a second type of conductivity extending from the first face to a second face of the substrate opposed to the first face, wherein the device comprises a third conducting or semiconducting region at the second face, wherein the process comprises the application of a biasing voltage to the third region in order to generate an electric field that accelerates the charges generated in the diode.