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公开(公告)号：US11145779B2
公开(公告)日：2021-10-12
申请号：US16294645
申请日：2019-03-06
IPC分类号： H01L27/092 , H01L29/16 , H01L29/04 , H01L29/20 , H01L31/109 , H01L31/18 , H01L31/0232 , H01L31/028 , H01L31/105
摘要： A photodiode includes an active area formed by intrinsic germanium. The active area is located within a cavity formed in a silicon layer. The cavity is defined by opposed side walls which are angled relative to a direction perpendicular to a bottom surface of the silicon layer. The angled side walls support epitaxial growth of the intrinsic germanium with minimal lattice defects.
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公开(公告)号：US11107941B2
公开(公告)日：2021-08-31
申请号：US16292525
申请日：2019-03-05
IPC分类号： H01L31/105 , H01L31/0232 , G02B6/12 , H01L31/028
摘要： A vertical photodiode includes an active area. The contacting pads for the diode terminals are laterally shifted away from the active area so as to not be located above or below the active area. The active area is formed in a layer of semiconductor material by a lower portion of a germanium area that is intrinsic and an upper portion of the germanium area that is doped with a first conductivity type. The vertical photodiode is optically coupled to a waveguide formed in the layer of semiconductor material.
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公开(公告)号：US11837678B2
公开(公告)日：2023-12-05
申请号：US17486219
申请日：2021-09-27
IPC分类号： H01L27/146 , H01L31/109 , H01L31/18 , H01L31/0232 , H01L31/028 , H01L31/105
CPC分类号： H01L31/109 , H01L31/028 , H01L31/02327 , H01L31/105 , H01L31/1804
摘要： A photodiode includes an active area formed by intrinsic germanium. The active area is located within a cavity formed in a silicon layer. The cavity is defined by opposed side walls which are angled relative to a direction perpendicular to a bottom surface of the silicon layer. The angled side walls support epitaxial growth of the intrinsic germanium with minimal lattice defects.
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公开(公告)号：US11784275B2
公开(公告)日：2023-10-10
申请号：US17308651
申请日：2021-05-05
IPC分类号： H01L33/00 , H01L31/105 , H01L31/0232 , G02B6/12 , H01L31/028
CPC分类号： H01L31/105 , G02B6/12004 , H01L31/028 , H01L31/02327
摘要： A vertical photodiode includes an active area. The contacting pads for the diode terminals are laterally shifted away from the active area so as to not be located above or below the active area. The active area is formed in a layer of semiconductor material by a lower portion of a germanium area that is intrinsic and an upper portion of the germanium area that is doped with a first conductivity type. The vertical photodiode is optically coupled to a waveguide formed in the layer of semiconductor material.
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