发明授权
- 专利标题： Vertical photodiode
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申请号： US16292525申请日： 2019-03-05
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公开(公告)号： US11107941B2公开(公告)日： 2021-08-31
- 发明人: Charles Baudot , Sebastien Cremer , Nathalie Vulliet , Denis Pellissier-Tanon
- 申请人： STMicroelectronics (Crolles 2) SAS
- 申请人地址： FR Crolles
- 专利权人： STMicroelectronics (Crolles 2) SAS
- 当前专利权人： STMicroelectronics (Crolles 2) SAS
- 当前专利权人地址： FR Crolles
- 代理机构： Crowe & Dunlevy
- 优先权： FR1851988 20180307
- 主分类号： H01L31/105
- IPC分类号： H01L31/105 ; H01L31/0232 ; G02B6/12 ; H01L31/028
摘要：
A vertical photodiode includes an active area. The contacting pads for the diode terminals are laterally shifted away from the active area so as to not be located above or below the active area. The active area is formed in a layer of semiconductor material by a lower portion of a germanium area that is intrinsic and an upper portion of the germanium area that is doped with a first conductivity type. The vertical photodiode is optically coupled to a waveguide formed in the layer of semiconductor material.
公开/授权文献
- US20190280144A1 VERTICAL PHOTODIODE 公开/授权日：2019-09-12
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