公开(公告)号：US11994801B2

公开(公告)日：2024-05-28

申请号：US17319785

申请日：2021-05-13

Applicant: STATS ChipPAC Pte. Ltd.

Inventor： Giwoong Nam ,  Junghwan Jang ,  Inhee Hwang ,  Taekyu Choi ,  Sanghyun Park

IPC: G03F7/16 ,  B05C11/06 ,  H01L21/02

CPC classification number: G03F7/168 ,  B05C11/06 ,  G03F7/162 ,  G03F7/164 ,  H01L21/0209

Abstract: A semiconductor manufacturing device has an outer cup and inner cup with a wafer suction mount disposed within the outer cup. A photoresist material is applied to a first surface of a semiconductor wafer disposed on the wafer suction mount while rotating at a first speed. A gas port is disposed on the inner cup for dispensing a gas oriented toward a bottom side of the semiconductor wafer. The gas port purges a second surface of the semiconductor wafer with a gas to remove contamination. The second surface of the semiconductor wafer is rinsed while purging with the gas. The gas can be a stable or inert gas, such as nitrogen. The contamination is removed from the second surface of the semiconductor wafer through an outlet between the inner cup and outer cup. The semiconductor wafer rotates at a second greater speed after discontinuing purge with the gas.

公开(公告)号：US20240272555A1

公开(公告)日：2024-08-15

申请号：US18644515

申请日：2024-04-24

Applicant: STATS ChipPAC Pte. Ltd.

Inventor： Giwoong Nam ,  Junghwan Jang ,  Inhee Hwang ,  Taekyu Choi ,  Sanghyun Park

IPC: G03F7/16 ,  B05C11/06 ,  H01L21/02

CPC classification number: G03F7/168 ,  B05C11/06 ,  G03F7/162 ,  G03F7/164 ,  H01L21/0209

Abstract: A semiconductor manufacturing device has an outer cup and inner cup with a wafer suction mount disposed within the outer cup. A photoresist material is applied to a first surface of a semiconductor wafer disposed on the wafer suction mount while rotating at a first speed. A gas port is disposed on the inner cup for dispensing a gas oriented toward a bottom side of the semiconductor wafer. The gas port purges a second surface of the semiconductor wafer with a gas to remove contamination. The second surface of the semiconductor wafer is rinsed while purging with the gas. The gas can be a stable or inert gas, such as nitrogen. The contamination is removed from the second surface of the semiconductor wafer through an outlet between the inner cup and outer cup. The semiconductor wafer rotates at a second greater speed after discontinuing purge with the gas.

公开(公告)号：US11955467B2

公开(公告)日：2024-04-09

申请号：US17347065

申请日：2021-06-14

Applicant: STATS ChipPAC Pte. Ltd.

Inventor： Junghwan Jang ,  Giwoong Nam ,  Myongsuk Kang

IPC: H01L25/10 ,  H01L21/48 ,  H01L21/56 ,  H01L21/683 ,  H01L23/00 ,  H01L23/31 ,  H01L23/538 ,  H01L25/00

CPC classification number: H01L25/105 ,  H01L21/4853 ,  H01L21/4857 ,  H01L21/565 ,  H01L21/568 ,  H01L21/6835 ,  H01L23/3128 ,  H01L23/5383 ,  H01L23/5386 ,  H01L23/5389 ,  H01L24/19 ,  H01L24/20 ,  H01L25/50 ,  H01L2221/68372 ,  H01L2224/214 ,  H01L2225/1035 ,  H01L2225/1058

Abstract: A semiconductor device has a substrate and a first light sensitive material formed over the substrate. A plurality of first conductive posts is formed over the substrate by patterning the first light sensitive material and filling the pattern with a conductive material. A plurality of electrical contacts is formed over the substrate and the conductive posts are formed over the electrical contacts. A first electric component is disposed over the substrate between the first conductive posts. A plurality of second conductive posts is formed over the first electrical component by patterning a second light sensitive material and filling the pattern with conductive material. A first encapsulant is deposited over the first electrical component and conductive posts. A portion of the first encapsulant is removed to expose the first conductive posts. A second electrical component is disposed over the first electrical component and covered with a second encapsulant.

公开(公告)号：US20240213231A1

公开(公告)日：2024-06-27

申请号：US18599304

申请日：2024-03-08

Applicant: STATS ChipPAC Pte. Ltd.

Inventor： Junghwan Jang ,  Giwoong Nam ,  Myongsuk Kang

IPC: H01L25/10 ,  H01L21/48 ,  H01L21/56 ,  H01L21/683 ,  H01L23/00 ,  H01L23/31 ,  H01L23/538 ,  H01L25/00

CPC classification number: H01L25/105 ,  H01L21/4853 ,  H01L21/4857 ,  H01L21/565 ,  H01L21/568 ,  H01L21/6835 ,  H01L23/3128 ,  H01L23/5383 ,  H01L23/5386 ,  H01L23/5389 ,  H01L24/19 ,  H01L24/20 ,  H01L25/50 ,  H01L2221/68372 ,  H01L2224/214 ,  H01L2225/1035 ,  H01L2225/1058

Abstract: A semiconductor device has a substrate and a first light sensitive material formed over the substrate. A plurality of first conductive posts is formed over the substrate by patterning the first light sensitive material and filling the pattern with a conductive material. A plurality of electrical contacts is formed over the substrate and the conductive posts are formed over the electrical contacts. A first electric component is disposed over the substrate between the first conductive posts. A plurality of second conductive posts is formed over the first electrical component by patterning a second light sensitive material and filling the pattern with conductive material. A first encapsulant is deposited over the first electrical component and conductive posts. A portion of the first encapsulant is removed to expose the first conductive posts. A second electrical component is disposed over the first electrical component and covered with a second encapsulant.

公开(公告)号：US20220365436A1

公开(公告)日：2022-11-17

申请号：US17319785

申请日：2021-05-13

Applicant: STATS ChipPAC Pte. Ltd.

Inventor： Giwoong Nam ,  Junghwan Jang ,  Inhee Hwang ,  Taekyu Choi ,  Sanghyun Park

IPC: G03F7/16 ,  H01L21/02

Abstract: A semiconductor manufacturing device has an outer cup and inner cup with a wafer suction mount disposed within the outer cup. A photoresist material is applied to a first surface of a semiconductor wafer disposed on the wafer suction mount while rotating at a first speed. A gas port is disposed on the inner cup for dispensing a gas oriented toward a bottom side of the semiconductor wafer. The gas port purges a second surface of the semiconductor wafer with a gas to remove contamination. The second surface of the semiconductor wafer is rinsed while purging with the gas. The gas can be a stable or inert gas, such as nitrogen. The contamination is removed from the second surface of the semiconductor wafer through an outlet between the inner cup and outer cup. The semiconductor wafer rotates at a second greater speed after discontinuing purge with the gas.

公开(公告)号：US20230317663A1

公开(公告)日：2023-10-05

申请号：US17657792

申请日：2022-04-04

Applicant: STATS ChipPAC Pte. Ltd.

Inventor： Junghwan Jang ,  Giwoong Nam ,  Myongsuk Kang

IPC: H01L23/00

CPC classification number: H01L24/19 ,  H01L24/94 ,  H01L2224/214 ,  H01L2224/19 ,  H01L2224/94 ,  H01L24/20

Abstract: A semiconductor device has a semiconductor die. A first dielectric layer is formed over the semiconductor die. A second dielectric layer is formed over the first dielectric layer. A trench is formed in the second dielectric layer. A via opening is formed to expose a contact pad of the semiconductor die within the trench. A seed layer is formed over the second dielectric layer. The seed layer extends into the trench and via opening. A conductive material is deposited into the via opening and trench. The conductive material is overburdened from the trench. The seed layer around the conductive material is etched in a first etching step. The conductive material is etched in a second etching step.

公开(公告)号：US20230259033A1

公开(公告)日：2023-08-17

申请号：US17650709

申请日：2022-02-11

Applicant: STATS ChipPAC Pte. Ltd.

Inventor： Giwoong Nam ,  Junghwan Jang ,  Inhee Hwang

IPC: G03F7/16 ,  H01L21/027

CPC classification number: G03F7/162 ,  H01L21/027

Abstract: A semiconductor manufacturing device has an outer cup and inner cup with a wafer mount disposed within the outer cup. A semiconductor wafer is disposed on the wafer mount. A dispenser dispenses a photoresist material onto a surface of the semiconductor wafer. A controller controls the dispenser to apply in a single application, the photoresist material to the surface of the semiconductor wafer while rotating at a first speed to form a thickness of the photoresist material up to 12.0 micrometers, or in the range of 3.0 to 12.0 micrometers. The first speed ranges from 400 to 700 RPM. The controller controls the dispenser to discontinue application of the photoresist material while rotating the semiconductor wafer at the first speed. The photoresist material dries while rotating the semiconductor wafer. The controller controls the dispenser to apply a coating to the semiconductor wafer prior to applying the photoresist material.

公开(公告)号：US20220399315A1

公开(公告)日：2022-12-15

申请号：US17347065

申请日：2021-06-14

Applicant: STATS ChipPAC Pte. Ltd.

Inventor： Junghwan Jang ,  Giwoong Nam ,  Myongsuk Kang

IPC: H01L25/10 ,  H01L23/00 ,  H01L23/31 ,  H01L23/538 ,  H01L21/683 ,  H01L21/48 ,  H01L21/56 ,  H01L25/00

Abstract: A semiconductor device has a substrate and a first light sensitive material formed over the substrate. A plurality of first conductive posts is formed over the substrate by patterning the first light sensitive material and filling the pattern with a conductive material. A plurality of electrical contacts is formed over the substrate and the conductive posts are formed over the electrical contacts. A first electric component is disposed over the substrate between the first conductive posts. A plurality of second conductive posts is formed over the first electrical component by patterning a second light sensitive material and filling the pattern with conductive material. A first encapsulant is deposited over the first electrical component and conductive posts. A portion of the first encapsulant is removed to expose the first conductive posts. A second electrical component is disposed over the first electrical component and covered with a second encapsulant.