METHODS FOR MAKING SEMICONDUCTOR DEVICES
    1.
    发明公开

    公开(公告)号:US20230386888A1

    公开(公告)日:2023-11-30

    申请号:US18317093

    申请日:2023-05-15

    Abstract: A method for making semiconductor devices includes: attaching a substrate with a plurality of electronic components onto a composite tape having an adhesive layer which is sensitive to ultraviolet (UV) irradiation and a UV-transparent base film, wherein the substrate is attached onto the adhesive layer of the composite tape; placing the substrate and the composite tape on a UV-transparent carrier, wherein the UV-transparent carrier is in contact with the UV-transparent base film of the composite tape; singulating the substrate into a plurality of semiconductor devices each having one of the plurality of electronic components; depositing a shielding material on the plurality of semiconductor devices to form a shielding layer on each of the plurality of semiconductor devices; irradiating a UV light to the composite tape through the UV-transparent carrier to reduce adhesivity of the adhesive layer; and detaching the plurality of semiconductor devices from the UV-transparent carrier.

    INTERCONNECT DEVICE AND SEMICONDUCTOR ASSEMBLY INCORPORATING THE SAME

    公开(公告)号:US20230343717A1

    公开(公告)日:2023-10-26

    申请号:US18302807

    申请日:2023-04-19

    CPC classification number: H01L23/5385 H01L25/162

    Abstract: An interconnect device comprises an insulating frame. The insulating frame comprises: a top insulating layer formed uppermost of the insulating frame and occupying an entirety of a top surface of the insulating frame; a bottom insulating layer formed lowermost of the insulating frame and occupying an entirety of a bottom surface of the insulating frame; and a central insulating layer that includes a plurality of insulators disposed between the top insulating layer and the bottom insulating layer, wherein the plurality of insulators form a plurality of through-holes between a first lateral surface and a second lateral surface of the central insulating layer. The interconnect device further comprises a plurality of bridge conductors, wherein each of the plurality of bridge conductors is disposed within a respective one of the plurality of through-holes and extends between the first lateral surface and the second lateral surface of the central insulating layer.

    APPARATUS AND METHOD FOR SELECTIVELY FORMING A SHIELDING LAYER ON A SEMICONDUCTOR PACKAGE

    公开(公告)号:US20230378088A1

    公开(公告)日:2023-11-23

    申请号:US18315490

    申请日:2023-05-10

    CPC classification number: H01L23/552 H01L23/3121 H01L21/561

    Abstract: An apparatus for selectively forming a shielding layer on a semiconductor package is provided. The apparatus includes: a tray including a plurality of package seats, the tray defines, for each of the plurality of package seats, one or more sets of guide holes outside the package seat; deposition masks, each of the deposition masks includes: a set of pins releasably inserted within one set of the one or more sets of guide holes to place the deposition mask on the tray; and a cover attached to the set of pins, the cover is configured to cover at least a portion of an outer surface of a semiconductor package received within a package seat when the set of pins is inserted within the set of guide holes associated with the package seat; and a deposition source configured to deposit a shielding material.

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