公开(公告)号：US09543258B2

公开(公告)日：2017-01-10

申请号：US15011311

申请日：2016-01-29

Applicant: STATS ChipPAC, Ltd.

Inventor： OhHan Kim ,  SunMi Kim ,  KyungHoon Lee

IPC: H01L23/60 ,  H01L21/56 ,  H01L23/29 ,  H01L23/31 ,  H01L23/552 ,  H01L23/00

CPC classification number: H01L23/60 ,  H01L21/561 ,  H01L21/563 ,  H01L23/29 ,  H01L23/3121 ,  H01L23/3135 ,  H01L23/552 ,  H01L24/97 ,  H01L2224/05026 ,  H01L2224/05573 ,  H01L2224/16225 ,  H01L2224/97 ,  H01L2924/00014 ,  H01L2924/01004 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01029 ,  H01L2924/01047 ,  H01L2924/01078 ,  H01L2924/014 ,  H01L2924/09701 ,  H01L2924/14 ,  H01L2924/181 ,  H01L2924/19041 ,  H01L2924/30105 ,  H01L2924/3011 ,  H01L2924/3025 ,  H01L2224/81 ,  H01L2924/00 ,  H01L2224/05599

Abstract: A semiconductor device includes a multi-layer substrate. A ground shield is disposed between layers of the substrate and electrically connected to a ground point. A plurality of semiconductor die is mounted to the substrate over the ground shield. The ground shield extends beyond a footprint of the plurality of semiconductor die. An encapsulant is formed over the plurality of semiconductor die and substrate. Dicing channels are formed in the encapsulant, between the plurality of semiconductor die, and over the ground shield. A plurality of metal-filled holes is formed along the dicing channels, and extends into the substrate and through the ground shield. A top shield is formed over the plurality of semiconductor die and electrically and mechanically connects to the ground shield through the metal-filled holes. The top and ground shields are configured to block electromagnetic interference generated with respect to an integrated passive device disposed in the semiconductor die.

Abstract translation: 半导体器件包括多层衬底。 接地屏蔽层设置在基板的层之间并且电连接到接地点。 多个半导体管芯通过接地屏蔽件安装到衬底上。 接地护罩延伸超过多个半导体管芯的覆盖区。 在多个半导体管芯和衬底上形成密封剂。 切割通道形成在密封剂中，在多个半导体管芯之间，并在接地屏蔽层之上。 沿着切割通道形成多个金属填充的孔，并延伸到基板中并通过接地屏蔽。 在多个半导体管芯上形成顶部屏蔽，并通过金属填充的孔电连接和机械地连接到接地屏蔽层。 顶部和接地屏蔽被配置为阻止相对于设置在半导体管芯中的集成无源器件产生的电磁干扰。

公开(公告)号：US20160148882A1

公开(公告)日：2016-05-26

申请号：US15011311

申请日：2016-01-29

Applicant: STATS ChipPAC, Ltd.

Inventor： OhHan Kim ,  SunMi Kim ,  KyungHoon Lee

IPC: H01L23/60 ,  H01L21/56 ,  H01L23/31

CPC classification number: H01L23/60 ,  H01L21/561 ,  H01L21/563 ,  H01L23/29 ,  H01L23/3121 ,  H01L23/3135 ,  H01L23/552 ,  H01L24/97 ,  H01L2224/05026 ,  H01L2224/05573 ,  H01L2224/16225 ,  H01L2224/97 ,  H01L2924/00014 ,  H01L2924/01004 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01029 ,  H01L2924/01047 ,  H01L2924/01078 ,  H01L2924/014 ,  H01L2924/09701 ,  H01L2924/14 ,  H01L2924/181 ,  H01L2924/19041 ,  H01L2924/30105 ,  H01L2924/3011 ,  H01L2924/3025 ,  H01L2224/81 ,  H01L2924/00 ,  H01L2224/05599

Abstract: A semiconductor device includes a multi-layer substrate. A ground shield is disposed between layers of the substrate and electrically connected to a ground point. A plurality of semiconductor die is mounted to the substrate over the ground shield. The ground shield extends beyond a footprint of the plurality of semiconductor die. An encapsulant is formed over the plurality of semiconductor die and substrate. Dicing channels are formed in the encapsulant, between the plurality of semiconductor die, and over the ground shield. A plurality of metal-filled holes is formed along the dicing channels, and extends into the substrate and through the ground shield. A top shield is formed over the plurality of semiconductor die and electrically and mechanically connects to the ground shield through the metal-filled holes. The top and ground shields are configured to block electromagnetic interference generated with respect to an integrated passive device disposed in the semiconductor die.

Abstract translation: 半导体器件包括多层衬底。 接地屏蔽层设置在基板的层之间并且电连接到接地点。 多个半导体管芯通过接地屏蔽件安装到衬底上。 接地护罩延伸超过多个半导体管芯的覆盖区。 在多个半导体管芯和衬底上形成密封剂。 切割通道形成在密封剂中，在多个半导体管芯之间，并在接地屏蔽层之上。 沿着切割通道形成多个金属填充的孔，并延伸到基板中并通过接地屏蔽。 在多个半导体管芯上形成顶部屏蔽，并通过金属填充的孔电连接和机械地连接到接地屏蔽层。 顶部和接地屏蔽被配置为阻止相对于设置在半导体管芯中的集成无源器件产生的电磁干扰。