Solid-state image sensor and electronic device

    公开(公告)号:US12237358B2

    公开(公告)日:2025-02-25

    申请号:US17775843

    申请日:2020-11-10

    Abstract: A solid-state image sensor including a photoelectric conversion region partitioned by trenches, a first semiconductor region surrounding the photoelectric conversion region, a first contact in contact with the first semiconductor region at a bottom portion of the trench, a first electrode in contact with the first contact in the first trench, a second semiconductor region in contact with the first semiconductor region having the same conductive type as the first semiconductor region, a third semiconductor region in contact with the second semiconductor region, between the second semiconductor region and a first surface, and having a second conductive type, a second contact on the first surface in contact with the third semiconductor region, and a second electrode in contact with the second contact, and a second surface at which the first contact and the first electrode are in contact with each other is inclined with respect to the first surface.

    Solid-state image sensor, imaging device, and method of controlling solid-state image sensor

    公开(公告)号:US11330202B2

    公开(公告)日:2022-05-10

    申请号:US16964059

    申请日:2018-12-14

    Abstract: To reduce power consumption in a solid-state image sensor that measures a time. The solid-state image sensor includes a count unit, a count control unit, a clock unit, and an estimation unit. The count unit counts the number of times a photon has been incident within a predetermined exposure period, and outputs a count value. The count control unit performs control to stop the count unit and performs a request of time information in a case where the count value has reached a predetermined value before the predetermined exposure period elapses. The clock unit measures a time and outputs the time information in response to the request. The estimation unit estimates the number of incident times of a photon within the predetermined exposure period on the basis of the output time information.

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